Information media and method and apparatus for writing and reproducing information using the same

By separating the electric field and thermal signals in the double-layer structure of the ferroelectric recording layer and the physical recording layer, the noise problem caused by temperature changes of the semiconductor probe is solved, the information writing density and signal-to-noise ratio are improved, and the composite signal is realized. Effective reproduction.

Inactive Publication Date: 2007-08-29
SAMSUNG ELECTRONICS CO LTD
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  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

Feasibility of this alternative is low because it is difficult to fabricate resistive semiconductor probes with high aspect ratios

Method used

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Embodiment Construction

[0034] Hereinafter, the present invention will be described more fully with reference to the accompanying drawings, in which embodiments of the invention are shown.

[0035] FIG. 1A shows the relationship between a conventional field effect semiconductor probe and an information storage medium according to the present invention. As shown in FIG. 1A , the resistance probe 30 includes a cantilever and a field effect transistor type semiconductor tip disposed on the front surface of the cantilever so as to face the surface of the medium. The medium 10 according to the invention comprises: a ferroelectric recording layer 2, in which information is stored in domains of polarization with variations in the electric field; input information; and an electrode 4 formed under the ferroelectric recording layer 2. The physical recording layer 3 is formed on the ferroelectric recording layer 2 in direct contact with the field effect transistor type semiconductor tip. Here, known materials...

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Abstract

Provided are a method and an apparatus for reproducing information using a semiconductor probe. The apparatus comprises a storage media including a ferroelectric recording layer in which information is stored by arranging the polarization direction of polarization domains of the ferroelectric recording layer and a physical recording layer which is formed on the ferroelectric recording layer and on which information is written by forming pits in the physical recoding layer, a semiconductor probe generating a composite signal including an electric field signal generated by an electric field variation of the ferroelectric recording layer of the storage media and a thermal signal generated by a temperature variation generated due to a variation in the shape of the physical recording layer, a signal detector detecting the composite signal from the semiconductor probe, and a demodulator demodulating the composite signal from the signal detector and extracting the electric field signal and the thermal signal from the composite signal. A signal generated by a field variation and a signal generated by a thermal variation are separated from each other by modulation and an effective information signal is detected such that a signal-to-noise ratio (SNR) is improved and the information signal can be stably reproduced even with the presence of a thermal noise.

Description

Technical Field [0001] The present invention relates to a method and apparatus for reproducing information using a field effect semiconductor probe, and more particularly, to a method and apparatus for reproducing information in which a thermal signal generated by a surface structure of a medium and an information signal generated by a change in an electric field of the medium can be separated from each other. Background Art [0002] As the demand for small-sized products such as portable communication terminals and electronic notebooks increases, highly integrated micro non-volatile recording media are increasingly needed. It is not easy to reduce the size of existing hard disks and highly integrate flash memory at low cost. Therefore, information storage media and methods using scanning probes have been studied as possible alternatives. [0003] Scanning probes are used in various types of scanning probe microscopes (SPM). For example, scanning probes are used in scanning t...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): G11B9/02G12B21/02G01N13/10G11B9/14
CPCG11B2005/0021G01Q80/00B82Y10/00G11B11/007G11B9/02G11B9/1409G01R1/07
OwnerSAMSUNG ELECTRONICS CO LTD