Capacitor structure

Abstract

A capacitor structure includes multiple conduction layers, dielectric layers and multiple contact windows, in which, the multiple conduction layers are piled to each other, each of which has a first conduction pattern and a second conduction pattern, the dielectric layer is matched between the first and second conduction layers and two adjacent conduction layers, the multiple contact windows are matched in the dielectric layers and connected with the first conduction pattern and the second conduction pattern in the adjacent two conduction layers, and the contact window of the first conduction pattern is a first strip one extending to the place between the first conduction patterns of the two adjacent conduction layers, and the border of the first strip window is placed in the sphere of the first patterns.

Description

technical field [0001] The invention relates to a capacitor structure, in particular to a capacitor structure with high capacitance value per unit area. Background technique [0002] Capacitors are an indispensable component in integrated circuits. In the design and process of capacitors, the capacitance value and installation area of ​​capacitors must be considered. Therefore, it is necessary to propose better capacitor designs and processes. [0003] Generally speaking, capacitors can be divided into three main types: metal-insulator-meta (MIM) capacitors, metal-line to metal-line (MOM) capacitors, and metal-insulator-meta capacitors. layer-polysilicon (metal-insulator-silicon, MIS) capacitor. Among them, MIM capacitors and MOM capacitors are widely used in deep submicron ICs, but their capacitance per unit area is relatively low. In addition, if a material with a high dielectric constant is used, although a high capacitance density can be obtained, the process is cumber...

AI Technical Summary

Problems solved by technology

Among them, MIM capacitors and MOM capacitors are widely used in deep submicron ICs, but their capacitance per unit area is relatively low.

In addition, if a material with a high dielectric constant is used, although a high capacitance density can be obtained, it has the problems of cumbersome, time-consuming and high cost processes, and the reliability of the capacitor is low.

[0004] With the increase in the integration of semiconductor components, the size of the components is gradually reduced, and the space for capacitors is relatively smaller and smaller, thus reducing the capacitance of the capacitor.

After entering the deep sub-micron (deep sub-micron) process, the problem of the reduction of the capacitance value of the capacitor is more serious.

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