Method for producing high quality silicon single crystal and silicon single crystal wafer made by using the same

Abstract

In a method for producing a high quality silicon single crystal by the Czochralski method, a lower portion of a solid-liquid interface of a single crystal growth is divided into a central part and a circumferential part, and the temperature gradient of the central part and the temperature gradient of the circumferential part are separately controlled. When a silicon melt located at a lower portion of a solid-liquid interface of a single crystal growth is divided into a central part melt and a circumferential part melt, the method controls the temperature gradient of the central part melt by directly controlling the temperature distribution of a melt and indirectly controls the temperature gradient of the circumferential part melt by controlling the temperature gradient of the single crystal, thereby effectively controlling the overall temperature distribution of the melt, thus producing a high quality single crystal ingot free of defects with a high growth velocity.

Description

technical field [0001] The present invention relates to a method for manufacturing a high-quality silicon single-crystal ingot free from point defects, and more particularly to a method for manufacturing a high-quality silicon single-crystal ingot, wherein when growing a silicon single-crystal ingot by the Czochralski method (Czochralski method), by controlling The temperature profile of the melt is used to control growth defects. Background technique [0002] In order to grow a high-quality silicon single crystal ingot capable of increasing the yield of semiconductor devices, conventional techniques control the temperature distribution of the high temperature region of the single crystal ingot after crystallization. This is to control stress caused by shrinkage due to cooling after crystallization, or to control movement of point defects occurring during crystallization. [0003] In general, the method of manufacturing silicon single crystal ingots by the Czochralski metho...

AI Technical Summary

Problems solved by technology

However, this technique requires a temperature holding time of 16 hours or longer, which is only feasible in theory and cannot be applied in practice

[0014] Second, these technologies have no substantive effect

As disclosed in Japanese Patent Application H5-61924 and Eidenzon et al. entitled "Defect-free Silicon Crystals Grown by the Czochralski Technique, Inorganic Materials", Vol.33, No.3, 1997, pp.272-279, it has been tried Growing a 200mm silicon single crystal ingot while periodically changing the crystal pulling speed, but the ideal quality silicon single crystal ingot was not obtained and the single crystal growth process was unstable

[0015] Third, inventions based only on solid-state reaction theory cannot achieve high production efficiency

For example, Korean Laid-Open Patent Publication No. 2001-101045 designs an optimum heat shield and water cooling tube, however, the crystal pulling speed is actually about 0.4mm / min, resulting in low production efficiency

[0016] In addition, the above-mentioned technologies have low production efficiency for high-quality single crystals

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