Thin film transistor and pixel structure and its manufacture method

Abstract

The disclosed preparation method for TFT comprises: forming a semi-conductor layer including an active area and a memory capacitance area on a transparent substrate, forming a source and drain on the semi-conductor layer; forming an isolation layer on all of the source, drain and semi-conductor layer, then forming grid and capacitance electrode on the corresponding areas of the active and memory area respectively; and in turns forming a dielectric and screening layers; etching an opening on the screening layer to obtain a contact window, finally, forming a conductive layer on the screening layer. This invention can increase storage capacity and reduces no the opening rate.

Description

Technical field [0001] The present invention relates to a thin film transistor and a pixel structure, and a manufacturing method of the pixel structure. Background technique [0002] Generally, for the production process of PMOS transistors, a mask must be used to define the P+ and P- regions in the photolithography process, and the general P-type transistor production includes forming a polysilicon layer, and the mask is used to define the P+ and P- regions. , And then sequentially form an insulating layer, a gate, and a dielectric layer, forming a contact window in the dielectric layer, a source electrode, a drain electrode and an organic layer, and forming another contact window in the organic layer. Layer, forming a conductive layer on the organic layer and electrically connected to the drain electrode through another contact window. In this way, six masks are required to form a photolithography process as a whole, which will increase the difficulty and complexity of the proc...

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Problems solved by technology

[0004] Although the above-mentioned prior art can produce a pixel structure, the process is complicated and cannot reduce the production cost and increase the output rate. Therefore, the prior art cannot meet the needs of users in actual use.

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