The invention relates to a manufacturing method a pixel structure. The manufacturing method comprises the following steps of: firstly providing a substrate, forming a semiconductor layer provided with an active region and a storage capacitor region on a light-transmitting substrate, forming a source electrode and a drain electrode on the semiconductor layer, forming an isolation layer on the source electrode, the drain electrode and the semiconductor layer, then forming a grid electrode and a capacitance electrode on the isolation layer, wherein the grid electrode and the capacitance electrode are respectively arranged on corresponding positions in the active region and the storage capacitor region, and then sequentially forming a dielectric layer and a shielding layer on the grid electrode, the capacitance electrode and the isolation layer, thus a thin film transistor is formed, etching an opening pattern on the shielding layer, thus a contact window is formed, and finally forming a conducting layer on the shielding layer, thus the drain electrode is electrically connected with the conducting layer by virtue of the contact window, and the pixel structure is formed. The pixel structure disclosed by the invention can improve storage capacitance of the pixel structure without reducing aperture ratio and also can prevent outleakage of metal.