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Semiconductor device and method for fabricating the same

一种制造方法、半导体的技术，应用在半导体/固态器件制造、半导体器件、电固体器件等方向，能够解决电流增加、半导体器件高速动作等问题，达到迁移率提高的效果

Active Publication Date: 2007-11-21
GK BRIDGE 1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, when it is an N-type field effect transistor (N-type MIS transistor), the mobility of carriers increases, the current increases, and the semiconductor device may operate at high speed.

Method used

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  • Semiconductor device and method for fabricating the same
  • Semiconductor device and method for fabricating the same
  • Semiconductor device and method for fabricating the same

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Experimental program
Comparison scheme
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Embodiment Construction

[0065] (first embodiment)

[0066] Hereinafter, the semiconductor device and its manufacturing method according to the first embodiment of the present invention will be described.

[0067] FIG. 1, FIG. 2(a) and FIG. 2(b) show the configuration of a semiconductor device according to a first embodiment of the present invention. It should be added that Fig. 1 is a top view corresponding to the line I-I in Fig. 2(a) and Fig. 2(b), Fig. 2(a) is a sectional view corresponding to the line IIa-IIa in Fig. 1, Fig. 2( b) is a sectional view corresponding to line IIb-IIb in FIG. 1 .

[0068] First, in the sectional view in the gate length direction shown in FIG. Shallow trench isolation (STI: shallow trench isolation) is formed in the trench that separates the first active region 10a. On the active region 10a surrounded by the element isolation region 11, a gate electrode 13a having a silicide layer 13aa thereon is formed with a gate insulating film 12a interposed therebetween. On th...

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Abstract

A semiconductor device includes: a first active region (10a) surrounded with an isolation region (11) of a semiconductor substrate (10); a first gate electrode (13a) formed over the first active region (10a) and having a protrusion protruding on the isolation region; a first side-wall insulating film (23a); an auxiliary pattern (13b) formed to be spaced apart in the gate width direction from the protrusion of the first gate electrode; a second side-wall insulating film (23b); and a stress-containing insulating film (19) containing internal stress and formed to cover the first gate electrode (13a), the first side-wall insulating film (23a), the auxiliary pattern (13b), and the second side-wall insulating film (23b). In this device, the distance between the first gate electrode (13a) and the auxiliary pattern (13b) is smaller than the sum total of: the sum of the thicknesses of the first (23a) and second (23b) side-wall insulating films; and the double of the thickness of the stress-containing insulating film (19).

Description

technical field [0001] The invention relates to a semiconductor device and a manufacturing method thereof. In particular, it relates to a semiconductor device having a structure in which stress is generated in a channel region by an insulating film covering a gate electrode and having internal stress among field effect transistors. Background technique [0002] In recent years, in order to increase the speed of semiconductor devices, the following structures and methods have been proposed, that is, using a film with internal stress to exert stress on the flow place (channel region) of the carrier from the outside, thereby making the transfer of the carrier rate increased. [0003] FIG. 17 , FIG. 18( a ) and FIG. 18( b ) show a conventional semiconductor device having a structure in which stress is applied to a channel region by an insulating film having internal stress (see, for example, Patent Document 1). As an additional note, Fig. 17 is a top view corresponding to the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/423H01L27/04H01L21/336H01L21/28H01L21/822
CPCH01L21/823412H01L21/823468H01L21/823481H01L21/823807H01L21/823864H01L21/823878H01L29/665H01L29/6653H01L29/6656H01L29/6659H01L29/7842H01L29/7843H01L21/18H01L29/768
Inventor 筒井将史
Owner GK BRIDGE 1