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Composition and method for photoresist removal

A composition and photoresist technology, applied in the direction of photosensitive material processing, etc., can solve problems such as blocking

Inactive Publication Date: 2007-11-28
AIR PROD & CHEM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Non-dissolved or partially dissolved photoresist can clog filters in recirculation tools or be redeposited onto wafers, both outcomes currently unacceptable to semiconductor users
[0004] Therefore, traditional photoresist strippers are not a suitable choice for this application in which the bilayer photoresist is dissolved for the rework process

Method used

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  • Composition and method for photoresist removal
  • Composition and method for photoresist removal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Compound wt%

[0028] Di(propylene glycol) methyl ether 51.7

[0029] p-toluenesulfonic acid 10

[0030] Tetrahydrofurfuryl alcohol 10.3

[0031]Benzyl alcohol 26

[0032] Thioglycerol 2

Embodiment 2

[0034] Compound wt%

[0035] Di(propylene glycol) methyl ether 45.9

[0036] p-toluenesulfonic acid 20

[0037] Tetrahydrofurfuryl alcohol 9.1

[0038] Benzyl alcohol 23

[0039] Thioglycerol 2

Embodiment 3

[0041] Compound wt%

[0042] Di(propylene glycol) methyl ether 45.9

[0043] p-toluenesulfonic acid 20

[0044] 1-octanol 9.1

[0045] Benzyl alcohol 23

[0046] Thioglycerol 2

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PUM

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Abstract

The present invention provides a composition for removing multilayer photoresist layers on an electronic device substrate for rework of the photoresist on the substrate. The composition comprises: (i) at least three discrete solvents; (ii) at least one organic sulfonic acid; and (iii) at least one corrosion inhibitor. The present invention is also a method for using the above composition. This composition and the method succeed in removing such multilayer photoresist at temperatures less than 65[deg.]C and in contact times under three minutes, allowing high throughput on sheet type wafer tools.

Description

[0001] Related Application Introduction [0002] This application claims priority to US Provisional Patent Application Serial No. 60 / 809,085, filed May 26,2006. Background of the invention [0003] A problem encountered in the electronics manufacturing industry is the dissolution of bi-layer photoresist for rework processes, which needs to be performed at less than 65°C / 3 minutes using single wafer tools. For conventional photoresist strippers, this problem can be solved at high operating temperatures (>75°C) and long processing times (over 10 minutes). With some conventional strippers, the photoresist is removed by stripping rather than dissolving. Non-dissolved or partially dissolved photoresist can clog filters in recirculation tools or redeposit onto wafers, both outcomes unacceptable to current semiconductor users. [0004] Therefore, conventional photoresist strippers are not a suitable choice for this application of dissolving bilayer photoresist for rework process...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42
Inventor 吴爱萍J・A・马塞拉
Owner AIR PROD & CHEM INC
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