Composition and method for photoresist removal
A composition and photoresist technology, applied in the direction of photosensitive material processing, etc., can solve problems such as blocking
Inactive Publication Date: 2007-11-28
AIR PROD & CHEM INC
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Problems solved by technology
Non-dissolved or partially dissolved photoresist can clog filters in recirculation tools or be redeposited onto wafers, both outcomes currently unacceptable to semiconductor users
[0004] Therefore, traditional photoresist strippers are not a suitable choice for this application in which the bilayer photoresist is dissolved for the rework process
Method used
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Embodiment 1
[0027] Compound wt%
[0028] Di(propylene glycol) methyl ether 51.7
[0029] p-toluenesulfonic acid 10
[0030] Tetrahydrofurfuryl alcohol 10.3
[0031]Benzyl alcohol 26
[0032] Thioglycerol 2
Embodiment 2
[0034] Compound wt%
[0035] Di(propylene glycol) methyl ether 45.9
[0036] p-toluenesulfonic acid 20
[0037] Tetrahydrofurfuryl alcohol 9.1
[0038] Benzyl alcohol 23
[0039] Thioglycerol 2
Embodiment 3
[0041] Compound wt%
[0042] Di(propylene glycol) methyl ether 45.9
[0043] p-toluenesulfonic acid 20
[0044] 1-octanol 9.1
[0045] Benzyl alcohol 23
[0046] Thioglycerol 2
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The present invention provides a composition for removing multilayer photoresist layers on an electronic device substrate for rework of the photoresist on the substrate. The composition comprises: (i) at least three discrete solvents; (ii) at least one organic sulfonic acid; and (iii) at least one corrosion inhibitor. The present invention is also a method for using the above composition. This composition and the method succeed in removing such multilayer photoresist at temperatures less than 65[deg.]C and in contact times under three minutes, allowing high throughput on sheet type wafer tools.
Description
[0001] Related Application Introduction [0002] This application claims priority to US Provisional Patent Application Serial No. 60 / 809,085, filed May 26,2006. Background of the invention [0003] A problem encountered in the electronics manufacturing industry is the dissolution of bi-layer photoresist for rework processes, which needs to be performed at less than 65°C / 3 minutes using single wafer tools. For conventional photoresist strippers, this problem can be solved at high operating temperatures (>75°C) and long processing times (over 10 minutes). With some conventional strippers, the photoresist is removed by stripping rather than dissolving. Non-dissolved or partially dissolved photoresist can clog filters in recirculation tools or redeposit onto wafers, both outcomes unacceptable to current semiconductor users. [0004] Therefore, conventional photoresist strippers are not a suitable choice for this application of dissolving bilayer photoresist for rework process...
Claims
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IPC IPC(8): G03F7/42
Inventor 吴爱萍J・A・马塞拉
Owner AIR PROD & CHEM INC
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