A semiconductor memory part and its making method

Abstract

The invention discloses a semiconductor storing element, which comprises the following parts: substrate, first cavity in the substrate, active element on the first cavity, and one or more grooves with depth more than the depth of the first cavity. The invention also provides the making method of semiconductor storage, which comprises the following steps: forming the first cavity in the substrate; forming the active element on the first cavity; forming one or more separating grooves with depth more than the depth of the first cavity. The invention reserves information in the memory, which reduces the manufacturing cost and power consumption greatly with small area for storage element.

Description

technical field [0001] The present invention relates to a semiconductor storage device, in particular to a semiconductor storage device manufactured using a standard process and a manufacturing method thereof. Background technique [0002] In the fabrication of semiconductor memory devices, a widely used and cost-effective fabrication process offered by many fabs is the standard process, the bulk complementary metal-oxide-semiconductor (CMOS) process. In the standard manufacturing process of semiconductor devices, referring to FIG. 1a as an example, a p-type bulk silicon substrate 100 can be placed on which one or more n-type wells 101 can be placed. One way to electrically isolate active device regions within well 101 is to form trench isolation regions 104 between adjacent devices 106 . Such prior art trench isolation regions typically comprise formed in the substrate and are made of such as silicon dioxide (SiO 2 ) trenches filled with dielectric material. Active devic...

AI Technical Summary

Problems solved by technology

As a result, memory devices are more expensive to manufacture and any specialized process may require an entirely new foundry, making the barrier to entry higher

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