Organic memory devices including organic material and fullerene layers and related methods

Abstract

An organic memory device may include a stack of an organic material layer and a fullerene layer to provide a data storage element between first and second electrodes. The data storage element may include an organic material layer formed on the first electrode, and a fullerene layer between the organic material layer and the second electrode. Methods of fabricating organic memory devices are also discussed.

Description

technical field [0001] The present invention relates to integrated circuit devices, and more particularly to integrated circuit memory devices and related methods. Background technique [0002] Semiconductor memory devices can be classified into volatile memory devices and nonvolatile memory devices. Volatile memory devices include DRAM devices and SRAM devices, and nonvolatile memory devices include flash memory devices, phase change memory devices, resistive RAM (RRAM) devices and magnetic RAM (MRAM) devices. [0003] Among these memory devices, inorganic semiconductor materials such as crystalline silicon have been used to fabricate electrical addressing and / or logic devices for storing and / or processing data. Although inorganic semiconductor memory devices formed from inorganic semiconductor materials have achieved some technical and commercial success, their complex structures can result in increased cost and reduced data storage density. Volatile memory devices forme...

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Problems solved by technology

Furthermore, when organic compound layers are used as data storage elements, the distribution of cell performance may be degraded due to the segregation of conductive nanoparticles

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