Quartz products and heat treatment apparatus

A product and quartz technology, which is applied in the field of quartz products and heat treatment devices, can solve the problems such as the inability to effectively prevent wafer contamination, and achieve the effects of reducing copper contamination and inhibiting the reduction of yield
CN101092278AInactive Publication Date: 2007-12-26TOKYO ELECTRON LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
TOKYO ELECTRON LTD
Publication Date
2007-12-26
Estimated Expiration
Not applicable · inactive patent

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Abstract

The present invention relates to control of copper contamination to semiconductor substrates upon operation of a heat treatment apparatus which is a semiconductor manufacturing apparatus and which is constructed with quartz products having been contaminated with copper when machined. The quartz product is placed in a heating atmosphere on the stage where it is not still used for a heat treatment for semiconductor substrates. Baking gases including a hydrogen chloride gas and a gas for enhancing activity of the hydrogen chloride gas, for example, an oxygen gas, are then supplied to the quartz product. Consequently, the copper concentration in the region from the surface to the 30 mum depth of the quartz product can be controlled below 20 ppb, preferably below 3 ppb. The baking process may be carried out before or after assembling the quartz product into the heat treatment apparatus.
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Description

technical field

[0001] The present invention relates to a technique for removing metal contained in a quartz product by baking the quartz product as a component of a heat treatment apparatus for heat-treating a semiconductor substrate. Background technique

[0002] As one of the heat treatment equipment used in the semiconductor manufacturing process, there is a vertical heat treatment equipment which is a batch type heat treatment equipment. This vertical heat treatment apparatus includes a heating furnace having a vertical reaction tube opened at the bottom and a heat source provided so as to surround the outside of the reaction tube. A plurality of semiconductor wafers (hereinafter referred to as wafers) are held in a wafer holder called a wafer boat in the shape of a partition, and are carried in from the lower side of the reaction tube, and are subjected to oxidation treatment, diffusion treatment, or formation by CVD in the reaction tube. Membrane treatment etc. [0...

Claims

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