Surface wave excitation plasma processing system

Abstract

To sustain uniform generation of plasma constantly over a large area. [MEANS FOR SOLVING PROBLEMS] A plasma source (10) comprises a microwave generator, a microwave waveguide (12) and a dielectric block (13), and a plasma source (20) also comprises a microwave generator, a microwave waveguide (22) and a dielectric block (23) similarly. The lid (3) of a chamber (1) is fixed with the microwave waveguides (12, 22) in parallel, and the dielectric blocks (13, 23) are arranged in the chamber (1). A reflector (30) is interposed between the dielectric blocks (13, 23) so that electromagnetic waves (microwaves) propagating through the dielectric blocks (13, 23) are prevented from advancing into counterpart dielectric blocks as reflection waves. Consequently, the plasma sources (10, 20) are controlled independently. Furthermore, a side reflector (40) is arranged at the outer circumference of each of dielectric blocks (23, 13) so that a standing wave of the electromagnetic wave propagating through the dielectric blocks (13, 23) is formed thus forming a large-area standing wave mode of surface wave SW uniformly.

Description

technical field [0001] The invention relates to a surface wave excited plasma treatment device for various treatments by using surface wave excited plasma. Background technique [0002] As a plasma processing apparatus that can generate plasma with a high density and a large area, there is known an apparatus that excites plasma using surface waves. In this type of device, it is known that microwave waveguides are branched and arranged in parallel on a dielectric plate, and microwaves introduced from one microwave generating unit are propagated into each microwave waveguide through multiple branches, and the A device that generates uniform plasma over a large area is realized by using microwave power over a wide area of ​​the electric body (for example, refer to Patent Document 1). [0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2005-33100 (page 2, Figs. 1 and 4). [0004] Using the device described in Patent Document 1 above, microwave power can be d...

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Problems solved by technology

However, in the device described in Patent Document 1, since the plasma as a load changes slightly, the combination state of microwave power and plasma in each waveguide may change, so that the distribution ratio of the power input to each waveguide may be changed. Changes occur, resulting in situations where uniform plasma cannot be obtained

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