Unlock instant, AI-driven research and patent intelligence for your innovation.

Device for leading-in inside and outside differential pressure step by step of magnetron sputtering vacuum chamber H2O

A technology of internal and external pressure difference and magnetron sputtering, which is applied in the directions of sputtering coating, vacuum evaporation coating, ion implantation coating, etc., and can solve the problems of moisture, unable to vacuumize and work normally, etc.

Inactive Publication Date: 2010-12-08
BEIHANG UNIV
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical solution problem of the present invention is: provide a kind of H of magnetron sputtering vacuum chamber 2 O The step-by-step gasification introduction device solves the problem that there is moisture in the vacuum chamber and the vacuum cannot work normally. 2 o 5 , ZrO, MgF 2 , S i During the preparation of thin films such as O, real-time synchronous hydrogenation can be realized, thereby solving the problem of excellent electrochromic H + Preparation of ion-conducting thin films

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device for leading-in inside and outside differential pressure step by step of magnetron sputtering vacuum chamber H2O
  • Device for leading-in inside and outside differential pressure step by step of magnetron sputtering vacuum chamber H2O
  • Device for leading-in inside and outside differential pressure step by step of magnetron sputtering vacuum chamber H2O

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] Such as figure 1 Shown, the embodiment of the present invention is made of sealed suction filter bottle 1, H 2 O gasification guide pipe 2, the first stage H 2 O gasification buoy flowmeter 3, second stage gasification buoy flowmeter 4, third stage H 2 O gasification is composed of a buoy flowmeter 5, a digital flow controller 6, a flow indicator 7, and a gas mixing chamber 8, and the sealed suction filter bottle 1 passes through the H 2 O gasification guide pipe 2 and the first stage H 2 O gasification with float flow meter 3 connection, first stage H 2 O gasification with float flowmeter 3 and then through H 2 The O gasification guide pipe 2 is connected with the buoy flowmeter 4 for the second-stage gasification, and the buoy flowmeter 4 for the second-stage gasification passes through the H 2 O gasification guide pipe 2 and the third stage H 2 O gasification is connected with float flowmeter 5, the third stage H 2 O gasification with float flowmeter 5 through...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
transmittivityaaaaaaaaaa
Login to View More

Abstract

The invention relates to a magnetron sputtering vacuum chamber H2O internal-and-external pressure difference step-by-step gatherer. The gatherer comprises a sealed filter flask, an H2O honeycomb duct, an at least three-level H2O gasification use flowrator, a digital flow controller and a mix chamber. The sealed filter flask is connected with the at least three-level H2O gasification use flowratorthrough the H2O honeycomb duct; the at least three-level H2O gasification use flowrator gasfies the liquid water inside the sealed filter flask into the single molecular water molecule and enters into the mix chamber rationally regulated by the digital flow controller; in the mix chamber, the H2O molecule is thoroughly mixed with Ar or Ar is mixed with O2, and enters into the vacuum sputtering asa part of the sputtering atmosphere, which solves the abnormal working problem because the water inside the vacuum chamber makes the vacuum pumping invalid, thus realizing instant synchronization hydrogenation during the preparation process of Ta2O5, ZrO, MgF2, SiO thin-film preparation, and further solving the preparation problem of the electrochromic use H+ ionic conduction thin film with good performance.

Description

technical field [0001] The invention relates to a magnetron sputtering vacuum chamber H 2 O The internal and external pressure difference is introduced into the device step by step, which belongs to the physical method for the preparation of electrochromic H + The technical field of preparation of ion-conducting thin films. Background technique [0002] The preparation of all-solid-state electrochromic smart windows (Smart Windows) by physical methods is a research field that has received extensive attention at home and abroad. The general structure of electrochromic smart windows is: glass / transparent conductive layer / electrochromic layer / ion conductive layer / ion storage layer / transparent conductive layer, when a small driving voltage is applied to the inner-outer transparent conductive layer of the structure When (generally≦5V), small ions (H + Li + Na + etc.) and the electrons in the transparent conductive layer are pulled in / out of the electrochromic layer under the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/06
Inventor 刁训刚王怀义杜心康杨海刚郝维昌王天民
Owner BEIHANG UNIV