And/not gate type non-volatility memory and manufacturing method and operation method therefor

Abstract

A non-logic gate and non-volatile memory has a plurality of memory cell rows; each memory cell row includes a source region and a drain region, a plurality of memory cells, a plurality of transmission grids, a first selection transistor and a second selection transistor; wherein, the source region and the drain region are arranged in a base board, a plurality of memory cells are positioned on the base board between the source region and the drain region, and each memory cell comprises a memory cell and a transistor, and the memory cell is connected with the transistor in parallel. Moreover, the transmission grids are respectively mounted on the base board between two neighboring memory cells and connect the memory cells in series, and the first selection transistor and the second selection transistor are respectively connected with two memory cells outside and are respectively next to the source region and the grain region.

Description

technical field [0001] The invention relates to a semiconductor element, in particular to a NAND gate (NAND) type non-volatile memory and its manufacturing method and operation method. Background technique [0002] Non-volatile memory elements have been widely used in personal computers and electronic devices due to their advantages of multiple data storage, reading, and erasing, and the stored data will not disappear after power off. a memory element. [0003] A typical non-volatile memory device is generally designed to have a stacked gate (Stacked-Gate) structure, which includes a floating gate (Floating Gate) and a control gate (Control Gate) made of doped polysilicon. The floating gate is located between the control gate and the substrate, and is in a floating state, not connected to any circuit, while the control gate is connected to the word line (Word Line), and also includes the tunnel oxide layer (Tunneling Oxide) and an inter-gate dielectric layer (Inter-Gate Di...

AI Technical Summary

Problems solved by technology

In this way, in the programming operation of the existing NAND type non-volatile memory, it is necessary to perform multiple programming steps and programming confirmation steps, so that the programmed memory cells are accurately set in the initial voltage, so that the take a long time

Moreover, when a selected memory cell is read, other non-selected memory cells in the same memory cell column are likely to cause read interference to the selected memory cell.

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