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Unsymmetrical thin-film transistor structure

A thin-film transistor, asymmetric technology, applied in the direction of transistors, etc., can solve the problems that the electrical properties of components cannot be effectively improved, and it is difficult to take care of it at the same time, so as to achieve the effects of improving electron mobility, reducing leakage current, and reducing series resistance

Inactive Publication Date: 2008-02-06
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It can be seen from the above graph that when the length of the lightly doped drain is adjusted, it is still difficult to take into account both the electron mobility and the leakage current, and the electrical performance of the device cannot be effectively improved.

Method used

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  • Unsymmetrical thin-film transistor structure
  • Unsymmetrical thin-film transistor structure
  • Unsymmetrical thin-film transistor structure

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Embodiment Construction

[0037] Please refer to FIG. 6 , which is a schematic cross-sectional view of a thin film transistor structure according to a first embodiment of the present invention. The thin film transistor 30 is used as a pixel switch element of a liquid crystal display, but the present invention is not limited thereto, and the thin film transistor 30 can also be applied to other circuit designs of the liquid crystal display and other related electronic products. In addition, in the preferred embodiment of the present invention, the thin film transistor 30 is an N-type thin film transistor, but in other embodiments of the present invention, the thin film transistor 30 can also be a P-type thin film transistor. The TFT 30 includes a substrate 32 , a semiconductor layer 34 disposed on the surface of the substrate 32 , a gate insulation layer 36 disposed on the surface of the semiconductor layer 34 , and a gate 38 disposed on the surface of the gate insulation layer 36 . The semiconductor lay...

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Abstract

The present invention provides a film transistor structure which is not symmetrical comprising an underlay, a semiconductor layer and a grid which are positioned on the underlay. The semiconductor layer comprises a first light adulteration area and a first heavy adulteration area which are positioned in one side of the grid; a second light adulteration area and a second heavy adulteration area which are positioned in the other side of the grid; the first light adulteration area and the first heavy adulteration area contains a first interface; the second light adulteration area and the second heavy adulteration area contains a second interface; and wherein the distance between the first interface and the neighboring first grid side wall and the distance between the second interface and the second grid side wall are not equal.

Description

[0001] This application is a divisional application of Chinese Patent Application No. 03154587.4 with a filing date of August 20, 2003 and an invention title of "Asymmetric Thin Film Transistor Structure". technical field [0002] The invention provides an asymmetric thin film transistor (thin film transistor, TFT) structure, especially an asymmetric thin film transistor structure of a liquid crystal display (liquid crystal display, LCD). Background technique [0003] The active layer of thin film transistors is composed of semiconductor materials, which can provide high electron mobility, so they have been widely used in various functional circuit designs. For example, a thin film transistor liquid crystal display (TFT-LCD) uses a large number of thin film transistors in the design of its pixel circuit and peripheral driving circuit. Since the functions and operation conditions of the pixel circuit and the peripheral driving circuit are different, their respective thin film...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786
Inventor 陈坤宏
Owner AU OPTRONICS CORP