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Crystallization method of amorphous silicon layer and photo mask thereof

An amorphous silicon layer and photomask technology, applied in optics, laser welding equipment, original parts for optomechanical processing, etc., can solve the problems of increasing the total number of moving substrates, reducing process capacity, and shortening process time, etc. To achieve the effect of reducing the number of laser irradiation and moving the substrate, and improving process efficiency and productivity

Inactive Publication Date: 2008-03-12
IND TECH RES INST
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Problems solved by technology

Therefore, when scanning in one direction by the SLS laser crystallization method, not only more laser shots (extra laser shots) are required, but also the total number of times to move the substrate is increased, which is not conducive to the process time. The shortening, and will reduce the production capacity of the process

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  • Crystallization method of amorphous silicon layer and photo mask thereof
  • Crystallization method of amorphous silicon layer and photo mask thereof
  • Crystallization method of amorphous silicon layer and photo mask thereof

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Embodiment Construction

[0061] Aiming at the shortcomings of the existing photomask pattern design that cannot perform bidirectional scanning and the process time is too long, the present invention proposes the following photomask, which can not only be used in the laser crystallization process of bidirectional scanning, but also shorten the process time. The following descriptions are preferred embodiments of the present invention, but not intended to limit the present invention.

[0062] FIG. 5 is a schematic diagram of a sequential lateral solidification laser crystallization device according to an embodiment of the present invention. Please refer to FIG. 5 , the sequential lateral solidification laser crystallization device 500 includes: a laser source (not shown), an optical system 510 and a substrate stage 520 , and the optical system 510 includes a photomask 512 and a projection lens 514 .

[0063] In particular, the photomask 512 of the present invention is suitable for the sequential latera...

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Abstract

A crystallization method for amorphous silicon layer is provided, which comprises steps as follows: A. providing a substrate for preformed amorphous silicon layer. B. providing photo mask with its own pattern including the first zone map and the second zone map which are in mirror symmetry with each other. C. Taking the first zone map as the first irradiating covering area and moving the substrate forward to the first direction to make the laser beam irradiate onto the amorphous silicon layer along the first direction through the first zone map. D. Taking the second zone map as the second irradiating covering area and moving the substrate forward to the second direction which is opposite to the first direction to make the laser beam irradiate onto the amorphous silicon layer along the second direction through the second zone map. E. repeat steps C and D to completely convert the amorphous silicon layer on the substrate to the polycrystal silicon layer.

Description

technical field [0001] The invention relates to a crystallization method and a photomask thereof, and in particular to a crystallization method of an amorphous silicon layer and a photomask used in a sequential lateral solidification (SLS) laser crystallization method. Background technique [0002] In recent years, in order to meet the needs of high-efficiency flat-panel displays and their panel integrated circuits, low-temperature crystallization technology for polysilicon thin films has been extensively studied, among which Excimer Laser Crystallization is currently the mainstream crystallization technology. [0003] FIG. 1 is a schematic diagram of a conventional sequential lateral solidification laser crystallization device. Please refer to FIG. 1 , the sequential lateral solidification (SLS) laser crystallization device 100 includes: a laser source (not shown), an optical system 110 and a substrate stage 120 . This sequential lateral solidification laser crystallizatio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/20H01L21/268B23K26/06G03F1/14G03F1/00
Inventor 朱芳村林家兴
Owner IND TECH RES INST