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Method for adjusting and controlling single-wall carbon nano tube axial energy belt

A technology of single-walled carbon nanotubes and a realization method, which is applied in the field of nanoelectronic devices, can solve the problems of incompatibility of semiconductor processes, inability to control the adjustment of high-efficiency single-walled carbon nanotubes, and the effect is not obvious, and achieves highly designable Effect

Inactive Publication Date: 2008-03-26
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These two methods separate the two processes of single-walled carbon nanotube growth and energy band regulation, the stability of chemical doping is poor, and the manipulation efficiency of scanning probe microscope is low and the effect is not obvious. These two technologies are not compatible with the current semiconductor process. Incompatible, unable to efficiently and quickly realize the controllable adjustment of the energy band of single-walled carbon nanotubes

Method used

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  • Method for adjusting and controlling single-wall carbon nano tube axial energy belt
  • Method for adjusting and controlling single-wall carbon nano tube axial energy belt
  • Method for adjusting and controlling single-wall carbon nano tube axial energy belt

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Effect test

Embodiment 1

[0038] (1) Thermally oxidize the surface of 300nm thick SiO 2 After the silicon wafer was cleaned and dried, PMMA was spin-coated on its surface, and the groove structure was obtained by electron beam etching (EBL) and reactive ion etching (RIE) etching, including two parts: used to measure the transport of carbon nanotubes The six electrodes of the nature and four lines of different widths embedded between the four pairs of electrodes. The depth of the groove is 80nm, the width of the electrode is 2μm, and the width of the lines from top to bottom are: 1μm, 2μm, 3μm and 4μm; Electron beam deposition (EBD) vapor-deposits 80nm metal platinum (Pt), and the embedding is obtained after stripping SiO 2 Pt electrodes and Pt strips with different widths in the middle of the electrodes.

[0039] (2) One end of the substrate obtained in step (1) utilizes microcontact printing to deposit 1 × 10 -2 mol L -1 FeCl 3 The solution is used as a catalyst, placed in a CVD furnace, and at 9...

Embodiment 2

[0043] (1) Thermally oxidize the surface of 500nm thick SiO 2After cleaning and drying the silicon wafer, spin-coat PMMA on its surface, etch 100nm thick grooves by electron beam etching (EBL), reactive ion etching (RIE), and evaporate 100nm metal platinum ( Pt), after exfoliation to get intercalated SiO 2 Six Pt electrodes with a width of 2 μm. Pt electrodes were used to measure the electrical properties of carbon nanotubes.

[0044] (2) The substrate obtained in step (1) is spin-coated with PMMA again, and etched between four pairs of Pt electrodes by electron beam etching (EBL) and reactive ion etching (RIE). The lines, electron beam deposition (EBD) evaporate 100nm metal titanium (Ti), and get embedded SiO after stripping 2 Ti strips with different widths, the widths of the lines from top to bottom are: 1 μm, 2 μm, 3 μm and 4 μm; when heated at 300 °C for 1 hour in an oxygen atmosphere in a muffle furnace, the Ti strips are oxidized to TiO 2 .

[0045] (3) Deposit 2×1...

Embodiment 3

[0049] (1) Thermally oxidize the surface of 1000nm thick SiO 2 After the silicon wafer is cleaned and dried, PMMA is spin-coated on its surface, and SiO with a thickness of 500nm is etched by electron beam etching (EBL) and reactive ion etching (RIE). 2 , to get SiO 2 Groove structures of different widths on the substrate.

[0050] (2) At one end of the heterogeneous substrate obtained in step (1), 5×10 -3 mol L -1 FeCl 3 The solution is used as a catalyst, placed in a CVD furnace, and at 960°C, ethanol is used as a carbon source and Ar gas is used as a carrier gas to grow ultra-long single-walled carbon nanotube arrays. The growth time is 45 minutes, and a gas flow is applied during the growth process. The direction of the carbon nanotubes is perpendicular to the micro-nano groove structure, that is, the carbon nanotubes float in the air after growing out of the catalyst, and the effect of the airflow makes their growth direction perpendicular to the micro-nano groove str...

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Abstract

This invention provides a method for realizing adjusting and controlling energy-bands of single-wall carbon nm tubes axially including: 1, setting up multiple convex and / or concave micro-nanometer structures on a Si02 / Si substrate, 2, applying a micro-contact printing method to deposit catalyst at one end of the substrate to grow a super-long single-wall carbon nm tube array by a chemical gas-phase deposition method, 3, the carbon nm tube array is set on the micro-nanometer structures to control the energy band structure axially.

Description

technical field [0001] The invention belongs to the technical field of nanoelectronic devices, in particular to a method for realizing axial energy band regulation of single-walled carbon nanotubes. Background technique [0002] Single-walled carbon nanotubes have a unique structure and excellent electrical and mechanical properties. Their synthesis, properties and applications have been the common concern of the scientific and industrial circles in the past two decades. Single-walled carbon nanotubes show broad application prospects in the field of nanoelectronic devices, and are expected to replace silicon as the core material of large-scale integrated circuits. [0003] The structure of single-walled carbon nanotubes determines its energy band structure, and the energy band structure determines its electrical and mechanical properties, which in turn determine its application. The controllable acquisition of single-walled carbon nanotubes with specific properties is the k...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/82
Inventor 刘忠范焦丽颖现晓军张莹莹张锦
Owner PEKING UNIV