Semiconductor image sensor die and production method thereof, semiconductor image sensor module, image sensor device, optical device element, and optical device module
A technology of imaging elements and semiconductors, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc., and can solve the problems of semiconductor imaging devices, such as the decrease in reliability of electrical characteristics and optical characteristics, and the thinning of difficult semiconductor devices. , to achieve excellent reliability, thinner profile, and higher mass production
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no. 1 example
[0062] In the first embodiment, the structure of a semiconductor imaging element and its manufacturing method, and the structure of a semiconductor imaging device and its manufacturing method are sequentially disclosed.
[0063] FIG. 1 is a schematic cross-sectional view showing the structure of a semiconductor imaging element 10 according to this embodiment. 2( a ) is a top view of the semiconductor wafer 24 , FIG. 2( b ) is a top view of each semiconductor element 11 , and FIG. 2( c ) is a cross-sectional view along line IIC-IIC shown in FIG. 2( b ).
[0064] The semiconductor imaging element 10 according to this embodiment includes the semiconductor element 11 shown in FIG. 2( b ) and FIG. 2( c ), a translucent member 18 , and a transparent adhesive 20 .
[0065] The semiconductor element 11 is preferably produced by dicing a semiconductor wafer 24 shown in FIG. 2( a ), and has a substrate 12 . On the upper surface 12a of the substrate 12, an imaging region 13 and a periph...
no. 2 example
[0103] In the second embodiment, the configuration of the semiconductor imaging element is different from that of the first embodiment described above. FIG. 7( a ) is a cross-sectional view showing the structure of the semiconductor imaging element according to this embodiment. 7( b ), FIG. 7( c ) and FIG. 8 are cross-sectional views respectively showing the structures of the first, second and third semiconductor imaging devices according to this embodiment.
[0104] The semiconductor imaging element 50 according to this embodiment includes the semiconductor imaging element 10 and the semiconductor integrated element 29 according to the above-mentioned first embodiment as shown in FIG. etc., such that the semiconductor imaging element 10 is bonded to one main surface 29 a of the semiconductor integrated element 29 . The semiconductor integrated device 29 is, for example, an integrated device such as a digital signal processor (DSP (digital signal processor)), and the function...
no. 3 example
[0114] In the third embodiment, the shape of the translucent member is different from that of the first and second embodiments described above. Fig. 9 (a) is a plan view of the semiconductor imaging element 65 of the present embodiment, Fig. 9 (b) is a cross-sectional view of the IXB-IXB line of Fig. 9 (a), and Fig. 9 (c) is the IXC of Fig. 9 (a) - Sectional view of the IXC line.
[0115] The semiconductor imaging element 65 includes a semiconductor element 11 and a translucent member 61 formed by adhering the microlens 16 of the semiconductor element 11 with a transparent adhesive 20 . The lower surface of the translucent member 61 is not a flat surface, and protrusions 62 and recesses 64 are formed in the edge region of the lower surface 63 .
[0116] Concretely, convex portions 62, 62 are respectively provided along two opposing sides among the four sides of the lower surface (the surface to be adhered to the microlens 16) 63 constituting the translucent member 61, and alo...
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