Mounting device, plasma processing apparatus and plasma processing method

Abstract

The invention provides a mounting device which has no heavy metallic pollution on the processed object, and is unable to cause insulation damage after a long-time static chuck. The invention is made by adopting the static chuck which is used as the insulation layer of the surface of the electrode layer through plasma spray plating, consisting of an yttria spray plating layer whose thickness is 200um to 280um. The surface of the invention is formed with a structure depending on the surface rough degree of the grain diameter of the spray plated yttria. The structure can increase the durability of the plasma without causing any heavy metallic pollution.

Description

technical field [0001] The present invention relates to a mounting device provided with an electrostatic chuck layer that electrostatically adsorbs an object to be processed such as a semiconductor wafer, a plasma processing apparatus provided with the mounting device, and a plasma processing method. Background technique [0002] Mounting device used in a plasma processing device that performs plasma processing such as etching and CVD (Chemical Vapor Deposition), because a vacuum chuck cannot be used as a unit for holding a substrate on a mounting device , so use a general electrostatic chuck. [0003] An electrostatic chuck is placed on the surface of a carrier in a thin plate shape, a foil-shaped electrode is buried in an insulating layer, and the substrate is attracted to the electrostatic chuck by electrostatic force generated by applying, for example, a DC voltage to the electrode. function on the surface. [0004] When vacuum processing, such as plasma processing, is...

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Problems solved by technology

Regarding these problems, nothing is described in Patent Document 2

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