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Method and device for depositing film, deposited film and photosensitive body employing same

A technology for depositing films and controlling devices, which is applied in optics, gaseous chemical plating, coating, etc., can solve the problems of decreased film-forming speed, difficulty, and decreased reproducibility of deposited film characteristics, and achieves the reduction of film-forming speed, The effect of less uneven film thickness and uneven high-speed characteristics

Active Publication Date: 2008-06-11
KYOCERA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, when such abnormal discharge occurs frequently, the collision of active species with respect to the substrate cannot be effectively performed, and the reproducibility of deposited film characteristics decreases.
[0013] These unreasonable situations can be suppressed or prevented by reducing the bias voltage applied between a pair of electrodes. However, if the bias voltage is reduced, the deposited film Film formation speed drops
Therefore, it is extremely difficult to increase the film forming speed and improve the film quality characteristics

Method used

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  • Method and device for depositing film, deposited film and photosensitive body employing same
  • Method and device for depositing film, deposited film and photosensitive body employing same
  • Method and device for depositing film, deposited film and photosensitive body employing same

Examples

Experimental program
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Effect test

Embodiment 1

[0140] In this embodiment, a negative pulsed direct current voltage is applied between the cylindrical substrate 10 (support body 3) and the cylindrical electrode 40 using the plasma CVD apparatus 2 shown in FIGS. 2 to 4 (see FIG. 5) The influence of the frequency and voltage value of the pulsed direct current voltage on the frequency of occurrence of arc discharge (abnormal discharge) was studied during film formation.

[0141] In the plasma CVD apparatus 2, the distance D1 between the cylindrical substrate 10 and the cylindrical electrode 40 was set to 25 mm, and film formation conditions other than the applied voltage were as shown in Table 1 below.

[0142] [Table 1]

[0143]

raw gas

SiH 4 (sccm)

340

h 2 (sccm)

200

B 2 h 6 (ppm)

0

CH 4 (sccm)

0

Pressure (Pa)

60

Substrate temperature (°C)

320

[0144] Negative pulsed DC voltage was a...

Embodiment 2

[0153] In this embodiment, the film is formed by applying a negative pulsed DC voltage between the cylindrical substrate 10 (support body 3 ) and the cylindrical electrode 40 using the plasma CVD apparatus 2 shown in FIGS. 2 to 4 . , the influence of the duty ratio of the pulsed DC voltage on the number of occurrences of arc discharge (abnormal discharge) was studied.

[0154] The duty cycle of the pulsed DC voltage was set in the range of 10% to 95%, and the frequency and voltage value of the pulsed DC voltage were set to 30 kHz and −1000 V, respectively. Film formation conditions other than the applied voltage were the same as in Example 1.

[0155] The number of occurrences of arc discharge during film formation is shown in Table 3 below. In addition, in Table 3, the number of occurrences of arc discharge is shown in the number of occurrences per hour.

[0156] [table 3]

[0157] Frequency 300kHz, potential difference -1000V

[0158] Duty cycle (%)

10

...

Embodiment 3

[0162] In this embodiment, the film is formed by applying a negative pulsed DC voltage between the cylindrical substrate 10 (support body 3 ) and the cylindrical electrode 40 using the plasma CVD apparatus 2 shown in FIGS. 2 to 4 . , the influence of the voltage value of the pulsed DC voltage (the potential difference between the cylindrical electrode 40 and the cylindrical substrate 10 (support 3 )) on the film formation rate was investigated.

[0163] The voltage value of the pulsed DC voltage is set in the range of 10V-4000V, and the frequency and duty cycle of the pulsed DC voltage are set to 30kHz and 50%, respectively. Film formation conditions other than the applied voltage were the same as in Example 1. The results of the measurement of the film formation rate are shown in FIG. 9 .

[0164] As shown in FIG. 9 , the larger the voltage value (-V) of the negative pulse-shaped DC voltage, the higher the film formation rate. Therefore, when applying a negative pulse-shape...

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Abstract

A method for depositing a film comprising a first step for placing an object (10) on which a film is deposited in a reaction chamber (4), a second step for supplying a reactive gas into a reaction chamber (4), and a third step for applying a pulse-like DC voltage between a first conductor (3) and a second conductor (40) arranged in the reaction chamber (4) while being spaced apart from each other. A device for implementing that method is also provided. In the third step, potential difference between the first conductor (3) and the second conductor (40) is preferably set in the range of 50V-3000V, and the pulse frequency of the pulse-like DC voltage applied to the first and second conductors (3, 40) is set at 300 KHz or below. The duty ratio of pulse in the pulse-like DC voltage is set between 20% and 90%, for example.

Description

technical field [0001] The present invention relates to a technique for forming a deposited film, and particularly relates to a technique suitable for forming an amorphous semiconductor film on an electrophotographic photoreceptor. Background technique [0002] Conventionally, a photoreceptor for electrophotography is produced by forming a photoconductive layer, a surface layer, and the like as a deposited film on the surface of a substrate such as a cylinder. As a method for forming a deposited film, a method (plasma CVD method) in which a substrate is coated with decomposition products obtained when a source gas is decomposed by high-frequency glow discharge is widely used. [0003] In such a deposition film forming method, when the deposition rate of the photoconductive layer and the surface layer on the electrophotographic photoreceptor is increased, the characteristics of the electrophotographic photoreceptor are sometimes impaired. In recent years, electrophotographic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/515C23C16/24G03G5/08
CPCC23C16/325H01J37/3444C23C16/24G03G5/08221G03G5/08214C23C16/503C23C16/4401H01J37/3435G03G5/08285C23C16/45508H01J37/3426H01J37/32009C23C16/515C23C16/45578H01J37/34C23C16/4586H01J37/3414C23C16/26
Inventor 池田昭彦大久保大五郎川上哲哉中村隆笹原正光长浜大辅
Owner KYOCERA CORP
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