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Method and device for manufacturing photosensitive body

一种制造方法、感光体的技术，应用在光学、仪器、涂层等方向，能够解决困难、沉积膜成膜速度下降等问题，达到膜厚不均少、成膜速度抑制、膜厚不均优质的效果

Active Publication Date: 2012-05-30
KYOCERA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] These unreasonable situations can be suppressed or prevented by reducing the bias voltage applied between a pair of electrodes. However, if the bias voltage is reduced, the deposited film Film formation speed drops
Therefore, it is extremely difficult to increase the film forming speed and improve the film quality characteristics

Method used

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  • Method and device for manufacturing photosensitive body
  • Method and device for manufacturing photosensitive body
  • Method and device for manufacturing photosensitive body

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0143] In this example, using Figure 2 ~ Figure 4 In the shown plasma CVD apparatus 2, a negative pulsed DC voltage is applied between the cylindrical substrate 10 (support 3) and the cylindrical electrode 40 (refer to Figure 5 ) to form a film, the influence of the frequency and voltage value of the pulsed DC voltage on the frequency of arc discharge (abnormal discharge) was studied.

[0144] In the plasma CVD apparatus 2, the distance D1 between the cylindrical substrate 10 and the cylindrical electrode 40 was set to 25 mm, and film formation conditions other than the applied voltage were as shown in Table 1 below.

[0145] [Table 1]

[0146]

[0147] Negative pulsed DC voltage was applied by supplying a pulsed voltage in the range of -4000V to -10V from a DC power supply 34 connected to the cylindrical base 10 (support 3 ), while grounding the cylindrical electrode 40 . The frequency of the negative pulse-shaped DC voltage is set in the range of 10 kHz to 500 kHz. ...

Embodiment 2

[0156] In this example, using Figure 2 ~ Figure 4 In the shown plasma CVD apparatus 2, when a negative pulsed DC voltage is applied between the cylindrical substrate 10 (support 3) and the cylindrical electrode 40 to form a film, the duty ratio of the pulsed DC voltage is studied. The influence of the frequency of occurrence of arc discharge (abnormal discharge).

[0157] The duty cycle of the pulsed DC voltage was set in the range of 10% to 95%, and the frequency and voltage value of the pulsed DC voltage were set to 30 kHz and −1000 V, respectively. Film formation conditions other than the applied voltage were the same as in Example 1.

[0158] The number of occurrences of arc discharge during film formation is shown in Table 3 below. In addition, in Table 3, the number of occurrences of arc discharge is shown in the number of occurrences per hour.

[0159] [table 3]

[0160] Frequency 300kHz, potential difference -1000V

[0161]

[0162] ×: Unstable discharge

[...

Embodiment 3

[0165] In this example, using Figure 2 ~ Figure 4 In the plasma CVD apparatus 2 shown, when a negative pulsed DC voltage is applied between the cylindrical substrate 10 (support 3) and the cylindrical electrode 40 to form a film, the voltage value of the pulsed DC voltage (circular The influence of the potential difference between the cylindrical electrode 40 and the cylindrical base 10 (support 3 )) on the film formation rate.

[0166] The voltage value of the pulsed DC voltage is set in the range of 10V-4000V, and the frequency and duty cycle of the pulsed DC voltage are set to 30kHz and 50%, respectively. Film formation conditions other than the applied voltage were the same as in Example 1. The results of the measurement of the film forming speed are as follows: Figure 9 shown.

[0167] Such as Figure 9 It was shown that the larger the voltage value (-V) of the negative pulse-shaped DC voltage, the higher the film formation rate. Therefore, when applying a negative...

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Abstract

A method for depositing a film comprising a first step for placing an object (10) on which a film is deposited in a reaction chamber (4), a second step for supplying a reactive gas into a reaction chamber (4), and a third step for applying a pulse-like DC voltage between a first conductor (3) and a second conductor (40) arranged in the reaction chamber (4) while being spaced apart from each other. A device for implementing that method is also provided. In the third step, potential difference between the first conductor (3) and the second conductor (40) is preferably set in the range of 50V-3000V, and the pulse frequency of the pulse-like DC voltage applied to the first and second conductors (3, 40) is set at 300 KHz or below. The duty ratio of pulse in the pulse-like DC voltage is set between 20% and 90%, for example.

Description

technical field [0001] The present invention relates to a technique for forming a deposited film, and particularly relates to a technique suitable for forming an amorphous semiconductor film on an electrophotographic photoreceptor. Background technique [0002] Conventionally, a photoreceptor for electrophotography is produced by forming a photoconductive layer, a surface layer, and the like as a deposited film on the surface of a substrate such as a cylinder. As a method for forming a deposited film, a method (plasma CVD method) in which a substrate is coated with decomposition products obtained when a source gas is decomposed by high-frequency glow discharge is widely used. [0003] In such a deposition film forming method, when the deposition rate of the photoconductive layer and the surface layer on the electrophotographic photoreceptor is increased, the characteristics of the electrophotographic photoreceptor are sometimes impaired. In recent years, electrophotographi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/515C23C16/24G03G5/08
CPCC23C16/325H01J37/3444C23C16/24G03G5/08221G03G5/08214C23C16/503C23C16/4401H01J37/3435G03G5/08285C23C16/45508H01J37/3426H01J37/32009C23C16/515C23C16/45578H01J37/34C23C16/4586H01J37/3414C23C16/26
Inventor 池田昭彦大久保大五郎川上哲哉中村隆笹原正光长浜大辅
Owner KYOCERA CORP
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