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Film formation device

A film-forming device and a film-forming chamber technology, which are applied in the direction of spraying devices, liquid spraying devices, and devices for coating liquid on the surface, etc., can solve the problems of more film-forming situations and difficulty in using large-area substrates, and achieve The effect of not reducing the quality of film formation and avoiding the evaporation of raw material mist

Active Publication Date: 2020-12-25
TOSHIBA MITSUBISHI-ELECTRIC IND SYST CORP
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Problems solved by technology

However, in the chemical vapor deposition method, film formation under vacuum is often required, and it is necessary to use a large vacuum vessel in addition to a vacuum pump, etc.
Furthermore, in the chemical vapor deposition method, there is a problem that it is difficult to adopt a large-area substrate as a substrate for film formation from the viewpoint of cost and the like.

Method used

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Embodiment Construction

[0033]

[0034] to improve Figure 7 In the prior art shown, instead of providing the heating mechanism 32 in the substrate loading table 30, an infrared light irradiator for performing a heating process of heating the substrate 10 by irradiating infrared light from an infrared lamp is separately provided as a heating mechanism. , and a structure arranged away from the substrate loading table 30 is considered as a new premise technology.

[0035] In the above-mentioned premise technology, an infrared light irradiator is used as a heating mechanism, whereby heating can be directly performed by infrared rays as electromagnetic waves without contacting the substrate 10 serving as a base material, and thus can be uniformly heated regardless of the shape of the substrate 10. heated up.

[0036] However, also in the above prerequisite technology, the raw material mist MT absorbs the infrared light irradiated from the infrared light irradiator, and the raw material mist MT is heate...

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Abstract

The purpose of the present invention is to provide a film formation device that makes it possible to form a thin film on a substrate at low cost, without lowering film formation quality or film formation speed. The film formation device (11) according to embodiment 1 has infrared radiation apparatuses (2, 4) and a thin film formation nozzle (1) that are separated from each other such that a heating treatment that is performed inside a heating chamber (80) and a mist-spraying treatment that is performed inside a film formation chamber (90) do not affect each other. The film formation device (11) according to embodiment 1 executes the heating treatment inside the heating chamber (80) by means of infrared radiation from the infrared radiation apparatuses (2, 4) and then executes the mist-spraying treatment inside the film formation chamber (90) by means of the thin film formation nozzle (1).

Description

technical field [0001] The present invention relates to a film forming apparatus used in the manufacture of electronic devices such as solar cells and forming a film on a substrate. Background technique [0002] As a method of forming a film on a substrate, there is a chemical vapor deposition (CVD (Chemical Vapor Deposition)) method. However, in the chemical vapor deposition method, film formation under vacuum is often required, and it is necessary to use a large vacuum vessel in addition to a vacuum pump or the like. Furthermore, in the chemical vapor deposition method, there is a problem that it is difficult to adopt a large-area substrate as a substrate for film formation from the viewpoint of cost or the like. Therefore, a fog method capable of film formation under atmospheric pressure has attracted attention. [0003] As a prior art related to a film forming apparatus using a mist method, for example, the technology of Patent Document 1 exists. [0004] In the techn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44B05B12/04B05D3/00
CPCB05D1/02B05D7/546B05D3/0227B05D2252/04B05D2252/10H01L21/6776H01L21/67115H01L21/67173B05B16/95B05B16/20B05B12/18H05K3/146H05K3/0097C23C16/4486C23C16/0209C23C16/46C23C16/54B05B7/0012B05B7/1606B05B13/0221
Inventor 织田容征
Owner TOSHIBA MITSUBISHI-ELECTRIC IND SYST CORP
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