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Preparing process for P type nanometer BiTe based materials

A base material and nano-technology, applied in the field of preparation of P-type nano-BiTe-based materials, can solve the problems that affect the wide application of BiTe, the inability to prepare P-type nano-BiTe, and affect the best performance of BiTe-based materials, so as to reduce the thermal conductivity. rate effect

Inactive Publication Date: 2008-06-18
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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AI Technical Summary

Problems solved by technology

This method can reduce the thermal conductivity of the material without substantially reducing the electrical conductivity of the material, and greatly improve the figure of merit characteristics of the thermoelectric material, but this method can only prepare N-type nano-BiTe-based materials, but cannot prepare P Type nano-Bite can not fully meet the needs of the field requiring low thermal conductivity, which affects the best performance of BiTe-based materials and affects the wide application of BiTe

Method used

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Embodiment Construction

[0021] In order to further understand the content of the invention, features and effects of the present invention, the following examples are enumerated hereby, and are described in detail as follows:

[0022] The preparation method of the P-type nano-BiTe-based material is to select a beaker as the reaction device for preparing the P-type nano-BiTe-based material; select SbCl 3 , NaNH 4 , Te, NaOH, and EDTA materials are used as reactants for preparing P-type nano-BiTe-based materials; according to 2Sb 3+ +2BH 4 - +6OH - →2H 2 BO 3 - +2Sb+5H 2 ↑ Calculate the reactant SbCl 3 , NaNH 4 , Te, NaOH, EDTA and accurately weighed with a balance; the weighed SbCl 3 , NaNH 4 , Te, NaOH, and EDTA into a beaker, set the temperature of the beaker to 60-80°C, and put a stainless steel stirrer in the beaker, and stir the SbCl at a speed of 60-80 rpm 3 , NaNH 4 , Te, NaOH, and EDTA for 5-30 hours; put the reactants in a beaker and wash them with distilled water, filter them wit...

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Abstract

The invention relates to a preparation method of P type nanometer BiTe base material, and is characterized in that the invention selects a high pressure kettle or a beaker as the reaction device to prepare P type nanometer BiTe base material; over five materials among BiCl3, SbCl3, SbCl5, Te, EDTA, tartaric acid, HCl, NaOH, NaNH4, HNO3, KOH, BiClO4, Fe, Mg are selected as reactant to prepare P type nanometer BiTe base material. Calculate the required quality of the reactant and weigh accurately; put the reactant in the reaction device for reaction, and then dry after washing and filtering, the reactant can become P type nanometer BiTe base material after cooling. After reaction, the BiTe base material is P type, through the analysis of XRD or TEM, the obtained powder particle sizes are nano-scale; when making into thermoelectric material, the thermal conduction of the materials can be effectively reduced, and the high quality characteristics of the BiTe base materials are fully exerted.

Description

technical field [0001] The invention belongs to the technical field of thermoelectric materials, in particular to a preparation method of a P-type nano BiTe-based material. Background technique [0002] The highest dimensionless figure of merit ZT of BiTe-based materials is close to 1, and it is currently the thermoelectric material with the best thermoelectric performance near room temperature. It has a wide application background in the refrigerators of space engineering remote sensing telemeters, isotope thermoelectric generators, portable refrigerators, and electronic cold drink machines. [0003] The currently known preparation method of nano-thermoelectric materials is based on the traditional bulk Bi 2 Te 3 Bi with the same composition added to the thermoelectric material 2 Te 3 Nanoparticles act as additional phonon scattering centers. This method can reduce the thermal conductivity of the material without reducing the electrical conductivity of the material, an...

Claims

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Application Information

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IPC IPC(8): B22F9/24
Inventor 张丽丽张建中王泽深任保国
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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