Press-loading valve stack for large power all-controlled semiconductor device

A technology for power devices and press-fit valves, applied in the field of press-fit valve stacks, can solve problems such as the difficulty of press-fit methods, and achieve the effects of simple press-fit, uniform force on devices, and improved insulation capacity.

Inactive Publication Date: 2008-07-02
XUJI GRP +2
View PDF0 Cites 20 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the high current requirements of the semiconductor power device IGCT, it is necessary to achieve the pressing force required by this component, which is difficult to achieve in the traditional press-fitting method.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Press-loading valve stack for large power all-controlled semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] The site requirements must meet the conditions. First, the frame of the device is combined with the bottom and the screw in order, and then the power device and the radiator are arranged in series, and the positioning pins are used between the two devices. It comes with its own positioning pins), but in the middle of the two power devices in the middle are two heat sinks in opposite directions. There is an insulating pad at both ends of the device arrangement (its insulation degree determines the voltage insulation degree of the entire device), at the bottom is a lower assembly with two planes with variable relationship, and at the top is a multi-layer disc The upper support of the shaped spring (after being pressed, the stress generated by it is used to achieve the purpose of the pressing force of the element). The outer sides of the lower support and the upper support are respectively a lower spring plate and an upper spring plate, and a positioning pin is also arrang...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a compression charging valve pile of a semiconductor apparatus with high power and full control. Two same IGCT elements of power apparatus are arranged in the middle of the compression charging valve pile; two radiators are arranged in the middle of the two IGCT elements of power apparatus, and another two radiators are respectively arranged in the outboard of the two IGCT elements of power apparatus; coaxial lines of every apparatuses are overlapping installed together; outside of the two radiators of two sides, a corresponding insulation washer, a supporting part and a spring plate are overlapping installed separately in the outside of the coaxial lines; at least three screws are arranged as a string evenly surrounding the axes between two spring plates; every apparatus and element are fixed together through every screw. By adopting the coordination of two supporting parts and the spring plate through the surrounded screws to fix the apparatuses, the invention has the electrical equipment capability of simple compression charging, even force for apparatuses and capability to ensure performance of components. The application of the supporting part of universal coordination component ensures a pressing force applied on the surface of apparatuses, avoiding the full parallel of the upper and lower surface and full vertical between the upper and lower surface as well as the axes of apparatuses. The application of the supporting part of the spring component ensures that the source of the pressing force after the pressure is unloaded by the forcing press.

Description

technical field [0001] The invention relates to a press-fit valve stack of a high-power full-control semiconductor device, belonging to the technical field of power electronics. Background technique [0002] With the development of power electronics technology, power semiconductor devices are developing towards higher voltage and higher current levels, and consequently, higher requirements are put forward for the performance of matching radiators and the fastening of semiconductor devices. . In the field of high-voltage applications, flat-plate high-power devices (such as GTO, IGCT, integrated gate commutated thyristor IGCT, is a new type of high-power device, this product is an improvement and perfection of the gate-pole turn-off thyristor GTO) in The application in power electronic converter technology is very common, but the traditional flat-plate high-power devices and heat dissipation devices (especially water-cooled radiators) usually use long bolts to fix all devices...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/07H01L25/18H01L23/36
CPCH01L23/4006H01L23/4012H01L2924/0002
Inventor 张东江陈天锦李正力
Owner XUJI GRP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap