Label type polymer base ESD protection device and manufacturing method thereof

Abstract

The invention relates to a chip type high molecule-based ESD protective device and a manufacturing method thereof; the ESD protective device comprises a basal plate, an inner electrode and core materials, wherein the device has end parts provided with end electrodes and the outer side packaged by packaging materials; the inner electrode is provided with an electrode groove and coated with core material paste according to a design figure, and the core material paste is filled in the electrode groove; the manufacturing method includes that: the predesigned figure is arranged on the inner electrode of the basal plate; the electrode groove is cut in the inner electrode; the core material paste is printed on the predesigned figure for solidifying the core materials; the paste on the packaging layer is printed and the packaging layer is solidified; the finished product is got by scribing. The invention has the advantages that because the aluminum powders are used as conducting particles, the particle diameter is much smaller; because the particle diameter of the semiconductor particles and the insulation particles is smaller, higher resistance can be acquired under the condition of the lower high molecule bonding agent, and the drain current of the device is lower; the lower breakover voltage is achieved due to smaller width of the electrode groove; and the multi-path protection of the device is realized by adopting the zigzag type electrode groove.

Description

technical field [0001] The invention relates to a patch-type polymer-based ESD protection device and a manufacturing method thereof, and relates to a polymer-based electrostatic discharge suppressor, which is used for electrostatic protection of high-frequency circuit pressure-sensitive components. technical background [0002] With the development of communication technology, the data transmission rate of modern communication equipment is getting faster and faster, and the functions are becoming more and more powerful. The high-end chips used are extremely sensitive to overvoltage, but the ability of such devices to withstand voltage shocks is limited. The cost of such equipment is getting higher and higher. [0003] During use, electrostatic charge accumulation is easily generated due to contact, separation, friction, etc. Under certain conditions, electrostatic discharge (ESD) easily occurs at the I / O ports of these devices, which is harmed by electrostatic discharge, and...

AI Technical Summary

Problems solved by technology

Although some existing overvoltage protection components can also protect against electrostatic discharge (ESD) hazards, the inherent capacitance of these devices is on the order of tens of picofarads or higher. When these devices protect the ports of high-speed data transmission equipment, due to Excessive inherent capacitance will cause problems such as data distortion or loss during high-speed data transmission

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