Label type polymer base ESD protection device and manufacturing method thereof

A polymer-based, patch-type technology, applied in the direction of electric solid devices, semiconductor devices, overvoltage protection resistors, etc., can solve the problems of loss, high-speed data transmission data distortion, etc., achieve small leakage current, low turning voltage, The effect of small electrode spacing

Active Publication Date: 2011-11-16
SHANGHAI CHANGYUAN WAYON CIRCUIT PROTECTION CO LTD
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although some existing overvoltage protection components can also protect against electrostatic discharge (ESD) hazards, the inherent capacitance of these devices is on the order of tens of picofarads or higher. When these devices protect the ports of high-speed data transmission equipment, due to Excessive inherent capacitance will cause problems such as data distortion or loss during high-speed data transmission

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Label type polymer base ESD protection device and manufacturing method thereof
  • Label type polymer base ESD protection device and manufacturing method thereof
  • Label type polymer base ESD protection device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] see figure 1 It is a structural representation of the patch type polymer-based ESD protection device of the present invention, image 3 It is the schematic diagram of the microscopic morphology of the polymer-based ESD protective device core material of the present invention, such as figure 1 , a chip-type polymer-based ESD protection device, including a substrate 1, an internal electrode 3, a core material 2, an end electrode 4 is provided at the end, and the outside is encapsulated by an encapsulation material, wherein the internal electrode 3 is The copper electrode is provided with an electrode groove 31, and the inner electrode 3 is coated with a core material slurry in the coating area 9 according to the design pattern, and the core material slurry is filled in the electrode groove 31, and becomes a core material after curing. 2.

[0045] On the basis of the above solution, the internal electrode 3 is a linear internal electrode, the electrode groove 31 is locat...

Embodiment 2

[0060] Others are all the same as in Embodiment 1, except that the structure of the inner electrode and the electrode groove is different, please refer to figure 2 It is another structural schematic diagram of the chip-type polymer-based ESD protection device of the present invention. A chip-type polymer-based ESD protection device includes a substrate 1, an internal electrode 3', a core material, and a terminal electrode 4 at the end. The internal electrode 3' is a cross-shaped internal electrode 3', which has four regions of M, N, P, and O. The electrode groove 31' is located in the middle of the cross-shaped internal electrode 3', which is a ">--<" electrode groove 31' can realize five-way protection of inner electrodes MN, MO, MP, NO and NP.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a chip type high molecule-based ESD protective device and a manufacturing method thereof; the ESD protective device comprises a basal plate, an inner electrode and core materials, wherein the device has end parts provided with end electrodes and the outer side packaged by packaging materials; the inner electrode is provided with an electrode groove and coated with core material paste according to a design figure, and the core material paste is filled in the electrode groove; the manufacturing method includes that: the predesigned figure is arranged on the inner electrode of the basal plate; the electrode groove is cut in the inner electrode; the core material paste is printed on the predesigned figure for solidifying the core materials; the paste on the packaging layer is printed and the packaging layer is solidified; the finished product is got by scribing. The invention has the advantages that because the aluminum powders are used as conducting particles, the particle diameter is much smaller; because the particle diameter of the semiconductor particles and the insulation particles is smaller, higher resistance can be acquired under the condition of the lower high molecule bonding agent, and the drain current of the device is lower; the lower breakover voltage is achieved due to smaller width of the electrode groove; and the multi-path protection of the device is realized by adopting the zigzag type electrode groove.

Description

technical field [0001] The invention relates to a patch-type polymer-based ESD protection device and a manufacturing method thereof, and relates to a polymer-based electrostatic discharge suppressor, which is used for electrostatic protection of high-frequency circuit pressure-sensitive components. technical background [0002] With the development of communication technology, the data transmission rate of modern communication equipment is getting faster and faster, and the functions are becoming more and more powerful. The high-end chips used are extremely sensitive to overvoltage, but the ability of such devices to withstand voltage shocks is limited. The cost of such equipment is getting higher and higher. [0003] During use, electrostatic charge accumulation is easily generated due to contact, separation, friction, etc. Under certain conditions, electrostatic discharge (ESD) easily occurs at the I / O ports of these devices, which is harmed by electrostatic discharge, and...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01C7/12H01G9/18H01L23/60H05F3/02
Inventor 刘伟李江刘玉堂钱朝勇张树旺王军
Owner SHANGHAI CHANGYUAN WAYON CIRCUIT PROTECTION CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap