Hard coating film for forming tool and forming tool
一种硬质皮膜、被覆构件的技术，应用在溅射镀覆、运输和包装、离子注入镀覆等方向，能够解决长期耐久性差、耐烧结性差、弹性和塑性变形举动差异等问题，达到耐烧结性优异、耐久性提高的效果
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example 1
[0072] Films having the compositions shown in Tables 1 and 2 were formed using a film forming apparatus ( FIG. 1 ) having a plurality of arc evaporation sources. In this case, as the base material, when forming a film for investigation of film composition, hardness, and crystal structure, use a mirror-polished cemented carbide substrate, and when forming a film for sliding tests at high temperatures, use SKD11 Substrate (hardness HRC60). When any film is formed, the substrate is introduced into the chamber of the film forming device, and the chamber is vacuumed (exhausted to 1×10 -3 Pa or less), the substrate is heated to about 400° C., and then sputter coating is performed using Ar ions. Thereafter, when using an arc evaporation source to form a film, use a target of 100 mm, an arc current of 150 A, and a total pressure of 4 Pa in N 2 Atmosphere or N 2 +CH 4 Film formation is carried out in the mixed gas.
[0073] At the time of film formation, first use a target havi...
example 2
[0086] Films having the compositions shown in Table 3 were produced using a film forming apparatus ( FIG. 1 ) having a plurality of arc evaporation sources. At this time, when forming a film for investigating the composition, hardness, and crystal structure of the film, use a mirror-polished cemented carbide substrate as the substrate, and when forming a film for investigating the adhesion of the film , using SKD11 substrate (hardness HRC 60). When any film is formed, the substrate is introduced into the chamber of the film forming device, and the chamber is vacuumed (exhausted to 1×10 -3 Pa or less), the substrate is heated to about 400° C., and then sputter coating is performed using Ar ions. Thereafter, when using an arc evaporation source to form a film, use a target of 100 mm, an arc current of 150 A, and a total pressure of 4 Pa in N 2 Atmosphere or N 2 +CH 4 Film formation is carried out in the mixed gas.
[0087] At the time of film formation, first, the film l...
example 3
[0096] Films having the compositions shown in Table 4 were produced using a film forming apparatus ( FIG. 1 ) having a plurality of arc evaporation sources. In this case, as the substrate, when forming a film for investigation of the composition, hardness, and crystal structure of the film, use a mirror-polished cemented carbide substrate, and when forming a film for a sliding test at a high temperature, use Various metal materials shown in Table 6. When any film is formed, the substrate is introduced into the chamber of the film forming device, and the chamber is vacuumed (exhausted to 1×10 -3 Pa or less), the substrate is heated to about 400° C., and then sputter coating is performed using Ar ions. Thereafter, when using an arc evaporation source to form a film, use a target of 100 mm, an arc current of 150 A, and a total pressure of 4 Pa in N 2 Atmosphere or N 2 +CH 4 Film formation is carried out in the mixed gas.
[0097] At the time of film formation, first, the ...
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Abstract
Description
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