Silicon mandrel heating starting method for polysilicon hydrogen reduction furnace

A silicon mandrel and reduction furnace technology, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problems of complicated heating start-up procedures, rising production costs, and complicated high-voltage electrical control equipment, and achieve simplified equipment, The effect of reducing equipment and production costs and reducing production costs

Active Publication Date: 2008-07-23
四川永祥新能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method is relatively straightforward, but its disadvantage is that the high-voltage electric control equipment is relatively complicated, and the heating and starting procedure is also relatively complicated, resulting in a substantial increase in production costs; the second is to use an external heating body to bake the silicon core rod, such as in hydrogen In addition, carbon rods or molybdenum rods are installed in the reduction furnace, and plasma arc heating is also used. However, this method requires a large number of additional equipment and devices, and the heating start-up procedure is also relatively complicated.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] The silicon mandrel heating and starting method of polycrystalline silicon hydrogen reduction furnace is characterized in that: the specific steps are:

[0021] A. Add dopants to the innermost silicon core rod set in the hydrogen reduction furnace for doping treatment during production to obtain a doped silicon core rod to reduce its resistivity to 0.1Ω-cm;

[0022] B. Set the undoped silicon core rod on the outer ring of the doped silicon core rod, turn on the conventional power supply to heat the doped silicon core rod, and with the increase of temperature, the outer ring of the undoped silicon core rod to bake;

[0023] C. When the undoped silicon core rod in the outer ring is baked, the temperature rises to 600°C and its resistivity drops to 0.05Ω-cm, then the undoped silicon core rod is heated by a conventional power supply.

[0024] The dopant is a Group III element, or may be a Group V element, such as boron and phosphorus.

[0025] The doped silicon core rod m...

Embodiment 2

[0028] The silicon mandrel heating and starting method of polycrystalline silicon hydrogen reduction furnace is characterized in that: the specific steps are:

[0029] A. Adding dopant to the innermost silicon core rod set in the hydrogen reduction furnace for doping treatment during production to obtain a doped silicon core rod to reduce its resistivity to 0.05Ω-cm;

[0030] B. Set the undoped silicon core rod on the outer ring of the doped silicon core rod, turn on the conventional power supply to heat the doped silicon core rod, and with the increase of temperature, the outer ring of the undoped silicon core rod to bake;

[0031] C. When the undoped silicon core rod in the outer ring is baked, the temperature rises to 650°C and its resistivity drops to 0.05Ω-cm, then the undoped silicon core rod is heated by a conventional power supply.

[0032] The dopant is a Group III element, or may be a Group V element, such as boron and phosphorus.

[0033] The doped silicon core ro...

Embodiment 3

[0036] The silicon mandrel heating and starting method of polycrystalline silicon hydrogen reduction furnace is characterized in that: the specific steps are:

[0037] A. Adding dopant to the innermost silicon core rod set in the hydrogen reduction furnace for doping treatment during production to obtain a doped silicon core rod to reduce its resistivity to 0.07Ω-cm;

[0038] B. Set the undoped silicon core rod on the outer ring of the doped silicon core rod, turn on the conventional power supply to heat the doped silicon core rod, and with the increase of temperature, the outer ring of the undoped silicon core rod to bake;

[0039] C. When the undoped silicon core rod in the outer ring is baked, the temperature rises to 630°C and the resistivity drops to 0.07Ω-cm, then the undoped silicon core rod is heated by a conventional power supply.

[0040] The dopant is a Group III element, or may be a Group V element, such as boron and phosphorus.

[0041] The doped silicon core ro...

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PUM

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Abstract

The invention discloses a method for heating and starting a silicon core rod of a polysilicon hydrogen reduction furnace, which includes the following steps: the doping treatment of the silicon core rod so as to reduce the resistivity to 0.05-0.1 Omega. cm, a conventional power supply is provided to heat the doped silicon core rod, and bake the undoped silicon core rod on the external circle with the rising of the temperature; when the undoped silicon core rod on the external circle is baked and the temperature raises to 600-650 DEG C and the resistivity drops to 0.05-0.1 Omega. cm, heat the undoped silicon core rod with the conventional power supply. The invention leads the silicon core rod to be heated and started initially by the conventional power supply at ordinary temperature, no start-up device or equipment is needed and the heating and starting procedure is very simple.

Description

technical field [0001] The invention relates to a method for producing polysilicon by using a hydrogen reduction furnace, and mainly relates to a method for heating and starting a silicon core rod of a hydrogen reduction furnace for polysilicon. The invention is especially suitable for the production of solar-grade polysilicon. Background technique [0002] In the prior art, when using a reduction furnace to produce polysilicon, a silicon core rod is used as a heating element, and the product is deposited on a high-temperature pure silicon core rod. The initial diameter of the silicon core rod is 8-10 mm, and pure silicon is At room temperature, the electrical conductivity is very poor, and the resistivity is very large, generally tens to hundreds of Ω-cm. Only when the temperature of itself reaches above 600°C, its resistivity will drop to about 0.1Ω-cm. At this time, the conventional power supply Only then can it be heated, so the use of general conventional voltage cannot...

Claims

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Application Information

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IPC IPC(8): C01B33/031
Inventor 刘汉元戴自忠
Owner 四川永祥新能源有限公司
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