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Multi-chip stacking structure and its making method

A stacked structure, multi-chip technology, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problem of increased manufacturing costs and steps, unfavorable production of thin electronic devices, and the inability to effectively reduce the height of multi-chip stacked structures, etc. problem, to achieve the effect of increasing the number of chip stacks, avoiding the increase in cost and steps

Inactive Publication Date: 2008-08-06
SILICONWARE PRECISION IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, there are still some problems in the aforementioned multi-chip stacking structure. First, due to the need to additionally add a buffer sheet during the chip stacking process, the manufacturing cost and steps are increased; The height of the multi-chip stack structure cannot be effectively reduced, which is not conducive to the manufacture of thin electronic devices (such as Micro-SD cards)

Method used

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  • Multi-chip stacking structure and its making method
  • Multi-chip stacking structure and its making method
  • Multi-chip stacking structure and its making method

Examples

Experimental program
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no. 1 example

[0063] Please refer to FIG. 3A to FIG. 3F , which are schematic cross-sectional views of the first embodiment of the multi-chip stacking structure and its manufacturing method of the present invention.

[0064] As shown in Figure 3A and Figure 3B, a chip carrier 30 and a plurality of chips 311, 312 are provided, wherein the surface edges of the chips 311, 312 are provided with a plurality of welding pads 311a, 312a, so that the first chip 311 therein Adhesive on the chip carrier 30 with adhesive such as conductive adhesive or non-conductive adhesive (not shown), and then offset the second chip 312 with adhesive such as conductive adhesive or non-conductive adhesive (not shown) The lower first chip 311 is bonded on the first chip 311 in a stepwise manner at the bonding pad 311a to form the first chip group 31 . The chip carrier 30 can be a ball grid array (BGA) substrate, a land grid array (LGA) substrate or a lead frame structure.

[0065] Next, the bonding pads 311 a , 312 a...

no. 2 example

[0077] Please refer again to FIG. 4A to FIG. 4F , which are schematic diagrams of a second embodiment of the multi-chip stacking structure and its manufacturing method of the present invention. The multi-chip stacking structure and its manufacturing method of this embodiment are roughly the same as those of the foregoing embodiments, the main difference being that the bottom chip of the second chip set is connected to the second chip set using Film over Wire (FOW) technology. On the topmost chip of a chipset. In addition, to simplify the drawings and descriptions, the same or similar elements in this embodiment are represented by the same element symbols.

[0078]As shown in Figure 4A, a chip carrier 30 and a plurality of chips 311, 312 are provided, and the surface edges of the chips 311, 312 are provided with a plurality of welding pads 311a, 312a, so that the first and second chips 311, 312 Deviate from the direction of the chip pads and stack on the chip carrier 30 in a s...

no. 3 example

[0084] Please refer again to FIG. 5 , which is a schematic diagram of a third embodiment of the multi-chip stacking structure and its manufacturing method of the present invention. The multi-chip stacking structure and its manufacturing method of this embodiment are roughly the same as those of the previous embodiments, the main difference is that the top chip of the first chip set can be electrically connected to the chip carrier by reverse soldering, so as to further reduce the overall stacking structure. the height of.

[0085] As shown in the figure, the second chip 312 on the top layer of the first chip group 31 can be bonded to the pad 312a of the second chip 312 at the outer end of the bonding wire 341 by means of reverse bonding (Reverse Wire Bond). to form a stud (not shown), and then welded from the chip carrier 30, lead up and welded to the stud, so that the inner end of the welding wire 341 is stitched (Stitch Bond) to the second chip 312 In this way, the arc heig...

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Abstract

A multi-chip stacking structure and a preparation method thereof provide a chip bearing weight part and a plurality of chips. The surface edges of the chips are provided with a plurality of welding pads, a first chipset is formed through making the chips stack on the bearing weight part with ladder shaped mode towards the direction deviating the lower welding pads, the welding pads are protruded, the first chipset and the chip bearing weight part are electrically connected through a plurality of first bonding wires; another chip is connected with the first chipset through an adhesion layer, wherein the adhesion layer is provided with a plurality of fillers to support the chip or uses an adhesion film to coat the first bonding wires part arranged between the chip and the topmost chips of the first chipset, a second chipset is formed through making the other chips stack with the ladder shaped mode, the welding pads are protruded, and then the second chipset and the chip bearing weight part are electrically connected through a plurality of second bonding wires, thus a plurality of chips are stacked without the principle extra increasing areas and heights of encapsulation parts, applicable to light, thin and small electric devices.

Description

technical field [0001] The invention relates to a semiconductor structure and its manufacturing method, in particular to a multi-chip stacking structure and its manufacturing method. Background technique [0002] Due to the miniaturization of electronic products and the increase in the demand for high operating speeds, in order to improve the performance and capacity of a single semiconductor package structure to meet the needs of miniaturization of electronic products, the semiconductor package structure has become a trend of multi-chip modularization (Multichip Module) , so that two or more semiconductor chips are combined in a single package structure, so as to reduce the volume of the overall circuit structure of electronic products and improve electrical functions. That is, the multi-chip package structure can minimize the limitation of the operating speed of the system by combining two or more chips in a single package structure. In addition, the multi-chip package st...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/00H01L25/065H01L23/488H01L21/60
CPCH01L2924/01082H01L2924/01033H01L24/83H01L2224/83191H01L2224/838H01L25/0657H01L2224/48465H01L2224/48091H01L2224/48227H01L2224/73265H01L2225/0651H01L2225/06562H01L2224/92247H01L2224/32145H01L24/32H01L24/73H01L2924/14H01L2924/00014H01L2924/00012H01L2924/00
Inventor 刘正仁张锦煌张翊峰黄荣彬黄致明
Owner SILICONWARE PRECISION IND CO LTD
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