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Chemical mechanical polishing method for GaAs wafer

A mechanochemical polishing and wafer technology, applied in the field of polishing, can solve problems such as inability to ensure flatness and smoothness, difficulty, etc.

Inactive Publication Date: 2008-08-13
SUMITOMO ELECTRIC IND LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, if an attempt is made to indiscriminately increase the rate of primary polishing affected by mechanochemical polishing, prescribed flatness and smoothness cannot be ensured after primary polishing, and it becomes difficult to perform chemical polishing as secondary polishing. A mirror-like surface of the wafer is obtained in

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  • Chemical mechanical polishing method for GaAs wafer

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Embodiment Construction

[0018] As previously described, it is known that a polishing solution containing dichloroisocyanuric acid, sodium tripolyphosphate, sodium sulfate, sodium carbonate, and silica gel as components in addition to water can be used for mechanochemical polishing of a GaAs wafer as a preliminary polishing, (e.g. , see Japanese Patent Laid-Open No. 2005-264057 and Japanese Patent Laid-Open No. 11-283943).

[0019] Regarding this mechanochemical polishing solution, it is natural that the polishing rate of GaAs wafers and the flatness and smoothness of polished wafers are significantly affected depending on the ratio of components other than water.

[0020] Therefore, in the mechanochemical polishing using as primary polishing a polishing solution containing dichloroisocyanuric acid, sodium tripolyphosphate, sodium sulfate, sodium carbonate, and silica gel as components in addition to water, the present inventors varied the water removal Ratio of other components in an attempt to incre...

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Abstract

A method of performing mechano-chemical polishing serving as a primary polishing operation for a GaAs wafer, by using a mechano-chemical polishing solution containing dichloroisocyanuric acid, sodium tripolyphosphate, sodium sulfate, sodium carbonate, and colloidal silica as components except for water, includes the steps of: mounting the wafer on a mechano-chemical polishing apparatus; performing first-stage polishing by supplying the polishing apparatus with the polishing solution having a first composition in which 20-31 mass % of sodium tripolyphosphate is contained in the components except for water; and subsequently performing second-stage polishing by supplying the polishing apparatus with the polishing solution having a second composition in which 13-19 mass % of sodium tripolyphosphate is contained in the components except for water.

Description

technical field [0001] The present invention relates to a polishing method for GaAs wafers, and more particularly, to an improvement in the mechanochemical polishing method performed as a preliminary polishing for GaAs wafers. Background technique [0002] It is well known to use a crystalline wafer of GaAs belonging to group III-V compound semiconductors as a substrate for manufacturing various types of semiconductor devices such as light-emitting elements and light-receiving elements. In recent years, there has been an increasing demand for GaAs wafers used in semiconductor devices, particularly in the field of wireless communications, and thus it is desired to increase production efficiency (speed up) and reduce its cost. [0003] GaAs wafers are cut from GaAs ingots using wire saws, slicers, etc., and trimmed by mechanical grinding, etc. Finally, this GaAs wafer prepared by machining is polished to polish its main surface into a mirror-like surface. [0004] To polish ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B29/00C09G1/02C09G1/04B24B57/02B24B37/00H01L21/304
CPCH01L21/02024C09G1/02H01L21/304
Inventor 中山雅博山崎哲弥
Owner SUMITOMO ELECTRIC IND LTD
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