Photoresist composition, coating method thereof, method of forming organic film pattern using the same and display device fabricated thereby
A composition and photoresist technology, which can be applied in the photoengraving process of pattern surface, photosensitive materials and instruments for opto-mechanical equipment, etc., which can solve the problems of transmittance and sensitivity limitations, etc.
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Embodiment 1
[0158] By using 82g of a mixture of DAA, PGME and ACAC in a weight ratio of 45:25:30 (ie 36.9g DAA, 20.5g PGME and 24.6g ACAC) as an organic solvent with 1.0g photosensitizer and 17.0g polysiloxane resin (siloxane resin; SF-P2020 from TORAY) were mixed, and then the mixture was stirred at room temperature at a rotation speed of 40 rpm, thereby preparing a photoresist composition for a liquid crystal display circuit.
[0159] The photosensitizer is 2,3,4-trihydroxybenzophenone-1,2-naphthoquinonediazo-5-sulfonate and 2,3,4-trihydroxybenzophenone-1,2-naphthoquinonediazo-5-sulfonate mixed in a weight ratio of 1:1 (ie, 0.5g of each compound), A mixture of 3,4,4'-tetrahydroxybenzophenone-1,2-naphthoquinonediazo-5-sulfonate and also includes 500-4000ppm of F-based surfactant.
[0160] The resulting photoresist composition had a viscosity of 4.7 cps and was within the recommended viscosity range for a slot coater.
[0161] Slot coating method used as a non-spin coating method (see fo...
Embodiment 2
[0163] Except that the mixture of DAA and PGME (ie, 57.4 g DAA and 24.6 g PGME) mixed in a weight ratio of 70:30 was used as the organic solvent, the same method as in Example 1 was used to prepare a liquid crystal display circuit. photoresist composition.
Embodiment 3
[0165] A photoresist for a liquid crystal display circuit was prepared in the same manner as in Example 1, except that DAA and CP mixed in a weight ratio of 65:35 (i.e., 53.3 g DAA and 28.7 g CP) were used as the organic solvent combination.
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