Method for manufacturing MgZnO ultraviolet photovoltaic detector

An electrical detector, ultraviolet light technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problem that the stability of MgZnOM, MgZnOp cannot be easily adjusted, the development of MgZnO ultraviolet detectors in the solar blind area is limited, and it is difficult for ultraviolet photodetectors. and other problems, to achieve the effect of low dark current, good repeatability, and high UV-visible ratio

Inactive Publication Date: 2008-09-03
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the p-type stability of MgZnO and other problems, it is difficult to make a p-i-n structure ultraviolet photodetector
[0003] In recent years, people have carried out a lot of research work on ZnO ultraviolet detectors, but there is less research on MgZnO ultraviolet detectors. The reason is usually that the band gap of MgZnO and the p-type stability of MgZnO cannot be adjusted easil

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] Mg with a Mg component of 5% 0.055 Zn 0.95 O alloy target, the substrate temperature is 300 ℃ for AC magnetron sputtering, the preparation of Mg 0.05 Zn 0.95 O alloy film, followed by thermal evaporation coating and traditional wet etching process to prepare Mg for MSM structure electrode 0.05 Zn 0.95 O ultraviolet photodetection device.

[0014] Using a domestic AC magnetron sputtering station, at a substrate temperature of 300°C, a working vacuum of 1Pa, a sputtering power of 110W, and a bias voltage of 100V, the AC magnetron sputtering method was used to treat Mg 0.05 Zn 0.95 The O alloy target was sputtered to prepare the alloy thin film, and the sputtering time was 1 hour. A 100nm gold film was evaporated on the alloy film by vacuum thermal evaporation. After that, the traditional wet etching method was used to prepare the Mg of the MSM structure electrode. 0.05 Zn 0.95 O UV photodetector.

[0015] by Mg 0.05 Zn 0.95 The O thin film was characterized by...

Embodiment 2

[0017] Mg with a Mg component of 5% 0.05 Zn 0.95 O alloy target, the substrate temperature was 500 °C for AC magnetron sputtering to prepare Mg 0.05 Zn 0.95 O alloy film, followed by thermal evaporation coating and traditional wet etching process to prepare Mg for MSM structure electrode 0.05 Zn 0.95 O UV photodetector.

[0018] Using a domestic AC magnetron sputtering station, at a substrate temperature of 500°C, a working vacuum of 2Pa, a sputtering power of 120W, and a bias voltage of 115V, the AC magnetron sputtering method was used to treat Mg 0.05 Zn 0.95 The O alloy target was sputtered to prepare the alloy thin film, and the sputtering time was 1.2 hours. A 100nm gold film was evaporated on the alloy film by vacuum thermal evaporation. After that, the traditional wet etching method was used to prepare the Mg of the MSM structure electrode. 0.05 Zn 0.95 O UV photodetector.

[0019] by Mg 0.05 Zn 0.95 The O thin film was characterized by XRD, and a single dif...

Embodiment 3

[0021] Mg with a Mg component of 5% 0.05 Zn 0.95 O alloy target, the substrate temperature was 600 °C for AC magnetron sputtering to prepare Mg 0.05 Zn 0.95 O alloy film, followed by thermal evaporation coating and traditional wet etching process to prepare Mg for MSM structure electrode 0.05 Zn 0.95 O UV photodetector.

[0022] Using a domestic AC magnetron sputtering station, at a substrate temperature of 600°C, a working vacuum of 3Pa, a sputtering power of 130W, and a bias voltage of 130V, the AC magnetron sputtering method was used to treat Mg 0.05 Zn 0.95 The O alloy target was sputtered to prepare the alloy thin film, and the sputtering time was 1.5 hours. A 100nm gold film was evaporated on the alloy film by vacuum thermal evaporation. After that, the traditional wet etching method was used to prepare the Mg of the MSM structure electrode. 0.05 Zn 0.95 O UV photodetector.

[0023] by Mg 0.05 Zn 0.95 The O thin film was characterized by XRD, and a single dif...

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Abstract

The present invention belongs to semi-conductor optoelectronic technology field, which relates to a method of manufacturing of a MgZnO ultraviolet light electric detector, producing high quality MgZnO alloy thin film with different band-gap width (3.37-4.13eV) by communion magnetron sputtering, on the base producing the MgZnO ultraviolet light electric detector of the MSM structure electric pole by the method of vacuum heat evaporation and wet method etching. The MgZnO ultraviolet light electric detector adopting the method of the invention has the advantages such as higher ultraviolet visible ratio and lower dark current etc, and is suitable for the solar ultraviolet radiation monitoring, the blaze detecting, the missile early warning etc.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronics, and relates to a preparation method of an MgZnO ultraviolet photodetector. Background technique [0002] In recent years, with the in-depth research and exploration in the fields of astronomy, high-energy physics, and space technology, as well as the rapid development of microelectronics technology and information technology, people's research interest in ultraviolet light detection has been aroused, especially in the aspects of ultraviolet warning and ultraviolet guidance. Has been widely used. At present, MgZnO crystal thin films, as emerging optoelectronic materials, have aroused people's great interest. MgZnO ternary alloy is formed by solid solution of ZnO and MgO according to certain components. When the MgO component is low, it has a hexagonal structure, and vice versa, it has a cubic structure. Changing the Mg content can realize a continuously adjustable band gap (...

Claims

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Application Information

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IPC IPC(8): H01L31/18C23C14/35C23C14/54
Inventor 蒋大勇张吉英申德振姚斌赵东旭张振中
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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