FET devices and its manufacture method
一种场效应晶体管、晶体管的技术，应用在晶体管、半导体/固态器件制造、半导体器件等方向，能够解决复杂性、应力沟道技术不是令人十分满意、无效性等问题
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[0010] It will be appreciated that field effect transistors (FETs) are well known in the field of electronics. The standard components of a FET are a source, a drain, a body between the source and drain, and a gate. The gate capping body also enables the introduction of a conductive channel into the body between the source and drain. In common terms, the channel is occupied by the bulk. Typically, the gate is separated from the body by a gate insulator. Whether a FET evolves into an NFET or a PFET depends on whether the "on-state" current in the channel is carried by electrons or holes. (In different terminology, NFET and PFET devices are often referred to as NMOS and PMOS devices.) It is also understood that NFET and PFET devices are often used together in circuits, usually coupled into a CMOS structure. The fabrication of NFETs, PFETs and CMOS is well established in this field. It can be appreciated that a large number of steps are involved in the above process, and each...
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