High-temperature metal organic chemical gas-phase deposition reactor

Abstract

The invention discloses a high-temperature metal organic chemistry vapor deposition reactor, which comprises a shell body, a reaction chamber, a sample transfer chamber, a vacuum unit, a tail gas treating unit and an operation control unit. The invention is characterized in that the reaction chamber is of a cone-shaped structure with the upper base surface smaller than the lower base surface, thereaction chamber comprises a polygonal frustum-shaped supporting base and an inner cover sleeving on the outer side of the supporting base, the obliquity of the inner cover is larger than that of thesupporting base by 3 DEG to 5 DEG in order to form a reacting gas passage, reacting gases can be discharged from a gas outlet on the top of the reaction chamber through the reacting gas passage; a plurality of supporting base laying positions are provided along the peripheral inclined plane of the supporting base, an optical window matched with a monitoring point is provided on the inner cover for the real-time monitoring of the operation control unit. The high-temperature metal organic chemistry vapor deposition reactor enables the air supplying direction to be basically consistent with the heat floating direction by the cone-shaped structural reaction chamber, thereby reducing the generation of whirlpool, preventing pre-reaction, and improving the quality and the homogeneity of epitaxial material.

Description

technical field [0001] The invention relates to a chemical vapor deposition device, in particular to a reactor in a high-temperature metal organic chemical vapor deposition (MOCVD) device. Background technique [0002] Metal Organic Chemical Vapor Deposition (MOCVD for short) is an advanced vapor phase epitaxy technology developed in the 1970s. It has been used in I-V Si / Ge series, III-V GaAs series and GaN series and other optoelectronic materials are widely used in the production of optoelectronic materials. From the perspective of material quality and device performance, there is no other method comparable to it. [0003] The growth of thin film materials by metal organic chemical vapor deposition (MOCVD) usually requires various raw materials and carrier gases. Raw materials include metal organic MO sources, gas sources (such as ammonia), etc., which are involved in chemical reactions and form thin film products. Raw material composition; Carrier gases include hydrogen,...

AI Technical Summary

Problems solved by technology

Using low pressure growth or increasing the substrate speed can reduce the surface eddy current, but at the same time it will affect the film growth mechanism and it is difficult to control

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