Compensating circuit and storage having the same

Abstract

The invention provides a compensation circuit, which is suitable to be used in a series connected type operating component and comprises a writing drive circuit, a distance testing circuit, an operating component and an auxiliary drive circuit, wherein the writing drive circuit provides a writing current to a writing path; the distance testing circuit is coupled to the writing path so as to test the length of the path through which the current flows and to output a control signal; the operating component is coupled to the writing path; and the auxiliary drive circuit, according to the control signal, is used to provide an auxiliary current to the writing path.

Description

technical field [0001] The present invention is a compensation circuit, especially a current compensation circuit and a memory with the compensation circuit. Background technique [0002] With the growth of portable application products, the demand for non-volatile memory is increasing. Phase-change memory technology has competitive advantages in speed, power, capacity, reliability, process integration, and cost. characteristics, has been regarded as the most potential non-volatile memory technology for the next generation. The operation of the phase change memory is mainly by applying two different magnitudes of current pulses to the phase change memory, so that due to the effect of ohmic heating in the phase change memory, the local area will cause the amorphous phase change material due to different temperature changes. state (amorphous state) and crystalline state (crystalline state) reversible phase transition, and the purpose of storing data is achieved by the differe...

AI Technical Summary

Problems solved by technology

On the writing path, there will be different equivalent resistances due to the length of the writing path, such as R1, R2... or Rn, resulting in unnecessary voltage generation, which may cause distant phase change memory cells, such as The GST device 13_n may be partially crystallized or incompletely crystallized due to insufficient write constant current.

[0005] Traditionally, to improve this kind of problem is to increase the write constant current to avoid receiving insufficient current for the farther phase-change memory cells on the same write path, but this method may make the nearer ones on the same write path The phase-change memory cell, such as the GST device 13_1, receives an excessive writing constant current, which causes over-reset, so that the next time the memory cell is crystallized, it cannot be completely crystallized or needs to be increased. The critical voltage is the way to SET, which makes the crystallization (SET) resistance of the phase change memory cell, GST device 13_1, gradually increase, thus causing the range of sensing margin to become smaller and unstable.

Images