Method and device for decreasing offset voltage of Hall integrated circuit
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- WUXI POWERSILICON TECH
- Publication Date
- 2008-10-22
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
【Technical field】
[0001] The present invention relates to the improvement of semiconductor integrated circuits, especially Hall devices. More specifically, it relates to a layout design method and device for reducing the offset voltage of a Hall device integrated in an integrated circuit. 【Background technique】
[0002] Hall devices based on the principle of the Hall effect are mainly used as magnetic sensors. As we all know, the advantage of Hall devices made of silicon materials is that their manufacturing technology is compatible with microelectronic integrated circuit technology, and can be combined with various protection circuits (such as adjustment, compensation and protection circuits) and signal processing circuits (such as amplifiers, Schmitt trigger, band-pass filter and output circuit) etc. are integrated together to form various functional circuits, realizing mass production and greatly reducing production costs; output signals can be directly used by computers...