Interconnection line failure detecting method

A detection method and interconnection line technology, applied in the direction of measuring electricity, measuring devices, measuring electrical variables, etc., can solve the problems of unsatisfactory detection requirements, slow interconnection speed, etc., and achieve accurate positioning and high detection efficiency.

Inactive Publication Date: 2008-10-29
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The problem to be solved by the present invention is that the speed at which the early failure phen

Method used

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  • Interconnection line failure detecting method
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  • Interconnection line failure detecting method

Examples

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Example Embodiment

[0028] Example 1, such as figure 2 As shown, the interconnect failure detection method of Embodiment 1 of the present invention includes the following steps:

[0029] In step s1, at least two interconnection line units with the same interconnection line scale are connected in series to form a failure detection circuit. Because the aforementioned electromigration phenomenon can only be found in interconnects up to a certain length, the size of the selected interconnection unit is actually based on the research needs of the electromigration phenomenon of interconnects of a specific length. . In order to facilitate the description, embodiment 1 of the present invention still adopts such as figure 1 Copper interconnect line unit shown. For example, suppose figure 1 The resistance value of each copper interconnection line with a length of 400 microns shown is 500Ωm, then as figure 1 The minimum interconnection line unit composed of 5 copper interconnections in parallel is equivalen...

Example Embodiment

[0036] Example 2, such as image 3 As shown, the interconnect failure detection method of Embodiment 2 of the present invention includes the following steps:

[0037] In step s10, at least two interconnection line units with the same interconnection line scale are connected in series to form a failure detection circuit. Because the aforementioned electromigration phenomenon can only be found in interconnects up to a certain length, the size of the selected interconnection unit is actually based on the research needs of the electromigration phenomenon of interconnects of a specific length. . In order to facilitate the description, the second embodiment of the present invention still adopts such as figure 1 Copper interconnect line unit shown. For example, suppose figure 1 The resistance value of each copper interconnection line with a length of 400 microns shown is 500Ωm, then as figure 1 The minimum interconnection line unit composed of 5 copper interconnections in parallel is ...

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Abstract

The invention discloses a detecting method for failure of interconnected wires, comprising following the steps: at least more than two interconnected wire units with the same interconnected wire scale are serially connected to form a failure detecting circuit; test current is input to the failure detecting circuit, and the voltage at two ends of the failure detecting circuit is measured; if the measured voltage is higher than or equal to a set voltage value, the failure of the interconnected wires occurs in the failure detecting circuit; the input and the output of the failure detecting circuit where the failure of the interconnected wires occurs are connected to form a Wheatstone bridge, the current is input to the Wheatstone bridge, the current direction at the midpoint of the Wheatstone bridge is measured, and the position of the interconnected wires where the failure occurs is located according to the current directon. The detecting method for the failure of the interconnected wires can not only rapidly detect the failure phenomenon of the interconnected wires, but also can rapidly locate the position of the interconnected wires where the failure occurs.

Description

technical field [0001] The invention relates to a method for detecting failure of an interconnection line. Background technique [0002] Multilayer interconnection technology has become an important part of the manufacturing process of large-scale integrated circuits and very large-scale integrated circuits. The current high-performance VLSI has as many as 7-8 layers of copper interconnection lines. Therefore, seeking metal interconnection materials with lower resistivity and insulating materials with lower dielectric constant has become a major research direction for deep submicron and nanometer devices. [0003] Currently, low-k dielectrics, that is, materials with a lower dielectric constant (k<3.2), are used in multilayer interconnections to replace traditional silicon dioxide (SiO2) as interlayer insulation. The low-k dielectric material can effectively reduce the interconnect capacitance value without reducing the wiring density, so that the chip works faster and ...

Claims

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Application Information

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IPC IPC(8): G01R31/02
Inventor 王剑屏
Owner SEMICON MFG INT (SHANGHAI) CORP
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