Semi-conductor apparatus and forming method thereof

Abstract

Disclosed is a semiconductor; wherein a first grid electrode structure comprises a grid dielectric layer which directly contacts with a substrate, a lower electrode arranged on the grid dielectric layer and an upper electrode arranged on the lower electrode; a second grid electrode structure is composed of a grid dielectric layer which directly contacts with the substrate, and a gate electrode which is arranged on the grid dielectric layer.

Description

technical field [0001] The present invention relates to a semiconductor device, in particular to a semiconductor device having two different metal oxide semiconductor structures. Background technique [0002] Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a widely used field-effect transistor. According to the polarity of its "channel", MOSFET can be divided into P-type metal oxide semiconductor and N-type metal oxide semiconductor, usually referred to as PMOS and NMOS. [0003] In design, the P-type MOS and the N-type MOS have different threshold voltages. The different threshold voltages are mainly determined by the difference between the work function of the gate and channel materials, and are usually achieved by using two different metals as gate materials. [0004] Since two different metal layers need to be formed as gate materials, conventional methods usually form the two required metal layers separately. For example, U.S. Patent No. 7,074,664 discl...

AI Technical Summary

Problems solved by technology

Obviously, the concept of forming the first gate electrode material layer first and then forming the second gate electrode material layer after etching is a complicated and cumbersome step, which is completely inconsistent with the principle of process simplification that the industry has been pursuing.

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