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Light emitting diode element and manufacture method thereof

A technology of light-emitting diodes and components, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., and can solve the problems of easy damage to the surface of the epitaxial structure of light-emitting diodes

Inactive Publication Date: 2008-11-19
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the known etching, evaporation or adhesion methods are easy to damage the surface of the epitaxial structure of the light-emitting diode. Therefore, it is necessary to provide a manufacturing method that can increase the light extraction rate without damaging the epitaxial structure of the light-emitting diode. To form a light-emitting diode element with high light extraction efficiency

Method used

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  • Light emitting diode element and manufacture method thereof
  • Light emitting diode element and manufacture method thereof
  • Light emitting diode element and manufacture method thereof

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Embodiment Construction

[0055]The invention provides a high-brightness light-emitting diode element and a manufacturing method thereof, which can achieve the effect of increasing the light extraction rate without damaging the epitaxial structure of the light-emitting diode. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a III-nitride light-emitting diode device is specifically exemplified as a preferred embodiment and described in detail as follows. However, it is worth noting that the following examples are only used to illustrate the technical characteristics of the present invention, rather than to limit the present invention, and any modifications and changes made on the basis of the technical spirit of the present invention, such as structural modifications or Substitution of materials does not depart from the scope of the claims of the present invention.

[0056] Please refer to Figures 1A to 1D , Figures 1A to 1D A series ...

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Abstract

Disclosed is a light-emitting diode which comprises a microlens baseplate, a reflecting layer, a cushioning layer, a first electric semiconductor layer, a source bed, a second electric semiconductor layer, a first electrode and a second electrode. A plurality of microlenses are arranged on the upper surface of the microlens baseplate; the cushioning layer is arranged on the upper surface of the microlens baseplate, and the first electric semiconductor layer is arranged on the cushioning layer; the source bed is partially arranged on the first electric semiconductor layer; the second electric semiconductor layer is arranged on the source bed; the first electrode is arranged on the other part of the source bed, which is uncovered by the first electric semiconductor layer; the second electrode is arranged on the second electric semiconductor layer; the reflecting layer is arranged on the lower surface of the microlens baseplate.

Description

technical field [0001] The invention relates to a light-emitting diode element and a manufacturing method thereof, and in particular to a light-emitting diode element with a microlens substrate and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (LED) has good photoelectric properties such as low power consumption, low calorific value, long operating life, impact resistance, small size, fast response, and can emit color light with stable wavelengths, so it is often used in The application of home appliances, indicator lights of instruments and optoelectronic products. With the advancement of optoelectronic technology, solid-state light-emitting components have made great progress in improving luminous efficiency, service life, and brightness, and will become the mainstream of future light-emitting components in the near future. [0003] However, when the light emitted from the active layer of the known light-emitting diode reaches the inte...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/02H01L33/10
Inventor 沈建赋郭得山郭政达
Owner EPISTAR CORP
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