Method for forming graph

A patterning and sacrificial body technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of inapplicability in mass production, poor repeatability, and complex photoresist processing processes, and achieve reduced requirements and relaxation of restrictions. Effect
CN101312113BInactive Publication Date: 2010-06-16SEMICON MFG INT (SHANGHAI) CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SEMICON MFG INT (SHANGHAI) CORP
Publication Date
2010-06-16
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a pattern forming method, which comprises steps of providing a lining, forming sacrificers on the lining, filling a destination layer between the sacrificers to form a destination matter, defining masks on the sacrificer and the destination matter, removing the destination matter under a groove arranged among the masks by etching, and removing the masks and the sacrificers.The pattern forming method reduces requirements upon the photolithographic process in micro-pattern forming, releases limits to the thickness of photoresist, and can form much more micronic patternsbeyond the exposure limit of exposure machines.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a pattern forming method. Background technique

[0002] In the field of integrated circuit manufacturing, the production of semiconductor chips is usually divided into multiple layers, and the production of each layer needs to use photolithography technology for graphic definition to transfer the graphics from the photolithographic mask containing circuit design information to the wafer Above, a specific structure is formed, for example, a gate, a source / drain, a contact hole or a metal wiring of a device are formed.

[0003] With the rapid development of ultra-large-scale integrated circuits, the integration of chips is getting higher and higher, the feature size (CD, Critical Dimension) of components is getting smaller and smaller, and the graphic size that needs to be defined by lithography technology is also getting smaller and smaller. Small, more string...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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