Method for forming graph

Abstract

The invention discloses a pattern forming method, which comprises steps of providing a lining, forming sacrificers on the lining, filling a destination layer between the sacrificers to form a destination matter, defining masks on the sacrificer and the destination matter, removing the destination matter under a groove arranged among the masks by etching, and removing the masks and the sacrificers.The pattern forming method reduces requirements upon the photolithographic process in micro-pattern forming, releases limits to the thickness of photoresist, and can form much more micronic patternsbeyond the exposure limit of exposure machines.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a pattern forming method. Background technique [0002] In the field of integrated circuit manufacturing, the production of semiconductor chips is usually divided into multiple layers, and the production of each layer needs to use photolithography technology for graphic definition to transfer the graphics from the photolithographic mask containing circuit design information to the wafer Above, a specific structure is formed, for example, a gate, a source / drain, a contact hole or a metal wiring of a device are formed. [0003] With the rapid development of ultra-large-scale integrated circuits, the integration of chips is getting higher and higher, the feature size (CD, Critical Dimension) of components is getting smaller and smaller, and the graphic size that needs to be defined by lithography technology is also getting smaller and smaller. Small, more string...

AI Technical Summary

Problems solved by technology

[0009] However, the above-mentioned patterning method using thinner photoresist can only alleviate the problems existing in the formation of fine patterns to a certain extent, but cannot really solve them.

In fact, when the semiconductor process develops to 65nm technology and below, limited by the exposure limit of the exposure machine in the photolithography process, it is difficult to define fine patterns that meet the requirements even with a thinner photoresist

[0010] In the Chinese patent with the announcement number CN1272831C authorized on August 30, 2006, the method of processing the photoresist to improve its etching resistance to form fine patterns is used, but this method can only To a certain extent, the problem of forming fine patterns is alleviated, and the processing process of photoresist is also relatively complicated, and the repeatability is poor, which is not suitable for mass production.

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