Preparation method and product of a single-layer atomic channel fin field effect transistor

Abstract

The invention discloses a fin field effect transistor with single atomic layer thickness channel material and a preparation method thereof. The fin field effect transistor uses a high dielectric constant material as a dielectric layer and a single layer transition metal The compound is the channel material. Firstly, a vertical step or vertical array structure is etched on the substrate, and then a uniform coating dielectric layer is deposited on the side wall, and then a single-layer transition metal chalcogenide is synthesized at the step, and an anisotropic etching process is used to obtain a vertical structure. A channel material with a single atomic layer thickness, finally combined with selective wet etching and micro-nano processing technology, to obtain a fin field effect transistor with a channel material with a single atomic layer thickness. The fin width of the resulting transistor is only 0.6 nanometers; based on the different thicknesses of the top layer of the substrate, a fin field effect transistor with a height of several hundred nanometers can be obtained; by preparing a step array, a high-density fin array type fin field effect transistor can be obtained, Used to build highly integrated and low power logic devices.

Description

technical field [0001] The invention belongs to the applied research field of nano artificial compound, micro-nano device, logic device, etc., and specifically provides a method for preparing a fin field-effect transistor of a single-atom-layer-thick channel material. Background technique [0002] Moore's Law states that the number of transistors per unit area in an integrated circuit will double every year, which requires that the size of transistors be continuously reduced. When the channel width reaches below 10 nanometers, the quantum confinement effect of the traditional planar field effect transistor is significant, which hinders its further reduction in size. One of the solutions is to use a three-dimensional structure to construct a fin field effect transistor composed of a gate and a channel material covered by a dielectric layer. Thanks to the larger contact area between the gate and the channel material, and the thinner thickness of the channel material, the cont...

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Problems solved by technology

However, how to achieve vertically independent two-dimensional nanosheets in the experiment is still very challenging.

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