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Drive circuit for switch structure of emitter electrode

A technology for driving circuits and switch structures, which is applied in electronic switches, electrical components, pulse technology, etc.

Inactive Publication Date: 2008-12-17
STMICROELECTRONICS SRL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The circuit thus obtained is difficult to use with high current values ​​and it does not allow the connection of recirculation diodes between the collector and source terminals in half-bridge and full-bridge circuit configurations

Method used

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  • Drive circuit for switch structure of emitter electrode
  • Drive circuit for switch structure of emitter electrode
  • Drive circuit for switch structure of emitter electrode

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Embodiment Construction

[0053] The invention stems from the consideration that, in a Darlington-type circuit connection, the driver circuit of the emitter-switched structure should ideally have a current-voltage [I-V] characteristic of the type presented in FIG. 5A.

[0054] Figures 5B and 5C present the actual I-V characteristics of IGBT devices and high-voltage MOS devices, respectively. According to the comparison of the above ideal characteristics and actual characteristics, it can be visually confirmed that these devices cannot meet the required driving conditions.

[0055] In particular, the voltage drop in the conduction of the IGBT device is in any case too high to obtain the desired drive characteristics.

[0056] Similarly, by using high-voltage MOS devices, it is possible to identify components that require the aid of large silicon dies that are more than ten times larger than the die size required to implement the emitter switching structure itself.

[0057] It is worth noting, however, t...

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Abstract

The invention relates to a driving circuit (30) for an emitter-switching configuration (21) of transistors (BJT, MOS) having at least one first and one second control terminal (X1, X2) connected to the driving circuit (30) to form a controlled emitter-switching device (35) having in turn respective collector, source and gate terminals (C, S, G). Advantageously the driving circuit (30) comprises at least one IGBT device (22) inserted between the collector terminal (C) and a first end of a capacitor (C1), whose second end is connected to the first control terminal (X1), the IGBT device (22) having in turn a third control terminal (X3) connected, through a first resistive element (R1), to the gate terminal (G), as well as a second resistive element (R2) inserted between the gate terminal (G) and the second control terminal (X2).; Advantageously, the driving circuit (30) further comprises an additional supply (Va) inserted between the first and second ends of the capacitor (Cl) to ensure its correct biasing.

Description

technical field [0001] The invention relates to a driving circuit for an emitter switching structure consisting of bipolar and MOS transistors and having at least one first and one second control terminal connected to said driving circuit to form inverse A controlled emitter switching type device with corresponding collector, source and gate terminals. Background technique [0002] As is well known, the so-called emitter switching circuit structure comprises the connection of a bipolar transistor with a high breakdown voltage and a power MOSFET transistor with a low voltage. [0003] Figure 1 schematically shows such a structure, generally indicated as 1 . The emitter switch structure 1 comprises a bipolar transistor T1 and a MOS transistor M1, which are inserted in series with each other between a first and a second reference voltage, especially between a supply voltage Vcc and a ground GND. [0004] The emitter switch structure 1 provides that the bipolar transistor T1 i...

Claims

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Application Information

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IPC IPC(8): H03K17/0412H03K17/567
CPCH03K17/0412H03K17/567
Inventor R·斯科洛M·纳尼亚
Owner STMICROELECTRONICS SRL
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