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Yb and Er double doping plumbous tungstate crystal conversion material and preparation thereof

A conversion material, lead tungstate technology, used in the growth of polycrystalline materials, chemical instruments and methods, crystal growth, etc., can solve the problem of low luminous intensity, and achieve the effect of improving luminous intensity and wide coverage

Inactive Publication Date: 2008-12-24
HARBIN INST OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to solve the problem of low luminous intensity of the Er-doped lead tungstate crystal up-conversion material prepared in the prior art, and provide a Yb and Er double-doped lead tungstate crystal up-conversion material and its preparation method

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  • Yb and Er double doping plumbous tungstate crystal conversion material and preparation thereof

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specific Embodiment approach 1

[0008] Specific implementation mode 1: In this implementation mode, the Yb and Er double-doped lead tungstate crystal up-conversion material is made of WO 3 , PbO, Er 2 o 3 and Yb 2 o 3 made; where WO 3 The molar ratio with PbO is 1:1, Er 2 o 3 The doping concentration is 0.1 ~ 3mol%, Yb 2 o 3 The doping concentration is 0.1-3 mol%.

specific Embodiment approach 2

[0009] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the Yb and Er double-doped lead tungstate crystal up-conversion material is made of WO 3 , PbO, Er 2 o 3 and Yb 2 o 3 made; where WO 3 The molar ratio with PbO is 1:1, Er 2 o 3 The doping concentration is 0.5mol%, Yb 2 o 3 The doping concentration is 0.5mol%. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0010] Specific embodiment three: the difference between this embodiment and specific embodiment one or two is that WO 3 , PbO, Er 2 o 3 and Yb 2 o 3 The mass purity is higher than 99.99%. Others are the same as in the first or second embodiment.

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Abstract

The invention relates to a transition material on a Yb and Er dual-doped lead tungstate crystal and a preparation method thereof, relating to the transition material on the lead tungstate crystal and a preparation method thereof. The method solves the problem of low luminous intensity of a transition material on an Er-doped lead tungstate crystal prepared by the prior art. The transition material on the Yb and Er dual-doped lead tungstate crystal is prepared by WO3, PbO, Er2O3 and Yb2O3. The method comprises the following steps: firstly, required compositions are weighed; secondly, sintering is performed; and thirdly, the crystal is grown by adoption of the crystal pulling method, and then the transition material on the Yb and Er dua-doped lead tungstate crystal is obtained. The method dopes element ytterbium (Yb) in the transition material on the Er-doped lead tungstate crystal, and improves the luminous strength on a green wave band of the Er-doped lead tungstate crystal by three times on the basis of preserving the prior superior performance of the Er-doped lead tungstate crystal.

Description

technical field [0001] The invention relates to a lead tungstate crystal up-conversion material and a preparation method thereof. Background technique [0002] In recent years, there are more and more studies on the properties of Er-doped materials, including infrared-visible light upconversion, studies on the optical and electrical properties of Er, coupled with the progress and development of laser diodes, making the research on Er-doping and luminescence unprecedented. Pay attention to, constantly looking for suitable substrates, and conducting Er doping experiments. Lead tungstate crystal not only meets the conditions of Er doping and luminescence, but also has advantages of good optical transparency, high optical density, strong radiation hardness, stable physical and chemical properties, and high thermal conductivity, which is more conducive to the small size of up-conversion lasers. Therefore, it has attracted more and more attention. However, the luminous intensity ...

Claims

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Application Information

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IPC IPC(8): C30B29/32C30B15/04H01S3/16G02B1/02
Inventor 刘维海徐衍岭王锐王佳徐超刘彦梅
Owner HARBIN INST OF TECH
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