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Inhibition method of parasitic capacitance interfering signal in MEMS device micro-flow quantity and flow speed detection

A parasitic capacitance and flow velocity detection technology, which is applied in the field of micro-flow measurement of MEMS devices, can solve the problems that the parasitic capacitance analysis and suppression methods have not yet been reported, and achieve the effect of suppressing the influence and avoiding the parasitic capacitance

Active Publication Date: 2010-06-09
SHANGHAI UNIVERSITY OF ELECTRIC POWER +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the analysis and suppression methods of parasitic capacitance in flow measurement of MEMS microcavity structure have not been reported yet.

Method used

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  • Inhibition method of parasitic capacitance interfering signal in MEMS device micro-flow quantity and flow speed detection
  • Inhibition method of parasitic capacitance interfering signal in MEMS device micro-flow quantity and flow speed detection
  • Inhibition method of parasitic capacitance interfering signal in MEMS device micro-flow quantity and flow speed detection

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Embodiment

[0051] figure 1It is used to illustrate the generation and area of ​​parasitic capacitance in the flow detection of the piezoelectric-driven silicon-based micro-flow sensing schematic structure. The flow sensing schematic micro-structure is formed based on the silicon-glass bonding process, and the vibration of the upper chamber membrane is Driven by the piezoelectric diaphragm, there is a channel structure capable of forming a jet in the lower cavity. Because it has nothing to do with the analysis of parasitic capacitance, the specific channel structure is not given here. The vibration of the upper chamber membrane forces the fluid in the microcavity to flow along the channel of the lower chamber to form a microjet. The heat-sensitive detection platinum wire 6 of the jet flow velocity is set at the bonding place of the upper and lower chambers, and its parasitic capacitance is mainly generated in the upper and lower chambers. Between the upper cavity matrix silicon 4 and the ...

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Abstract

The invention discloses an inhibiting method of parasitic capacitance interfering signals that is used in the micrometeor flow speed detection of MEMS devices, leads a top piezoelectric electrode to be connected with the anode of a drive power supply and a lower piezoelectric electrode to be connected the ground cathode of the drive power supply, and can basically avoid the formation of Si-Pt parasitic capacitance. The embodiment of the invention adopts the inhibiting method of the parasitic capacitance to connect and shield the parasitic capacitance, and the output response peak value of thepositive and negative spike pulses of the detected output response signals with square wave drive is reduced from 3.92V to 0.96V, thus effectively inhibiting the parasitic capacitance.

Description

technical field [0001] The invention relates to the technical field of MEMS device micro-flow measurement, and more specifically relates to a method for suppressing parasitic capacitance interference signals in MEMS device micro-flow velocity detection. Background technique [0002] MEMS devices are microstructure cavities made on semiconductor substrate materials such as silicon, which can form microsensors and microdrivers based on piezoelectric, electrostatic, magnetostrictive and pyroelectric effects. The perception and action functions of the external world are widely used in many fields such as pressure sensors, temperature sensors, accelerometers, micropumps, microvalves, microswitches, and drug microsprays. With the continuous maturity and development of silicon-silicon or silicon-glass bonding technology in MEMS processing, the research on the microstructure of MEMS devices is promoted, that is, the microstructure is formed by bonding the upper and lower cavities, a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01F1/56
Inventor 李丽伟朱荣周兆英任建兴
Owner SHANGHAI UNIVERSITY OF ELECTRIC POWER