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Neutral developer solution for positive light-sensitive polyimides photo resist

A technology of photosensitive polyimide photoresist and developer, which is applied in the field of materials to achieve the effects of good development performance, good dispersion stability and defoaming properties

Inactive Publication Date: 2009-02-11
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is no bibliographical report on the use of neutral developer for positive photosensitive polyimide photoresist so far.

Method used

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  • Neutral developer solution for positive light-sensitive polyimides photo resist
  • Neutral developer solution for positive light-sensitive polyimides photo resist
  • Neutral developer solution for positive light-sensitive polyimides photo resist

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] In a 250ml clean beaker, weigh 40.0g of N,N-dimethylformamide, 4.0g of absolute ethanol, 0.3g of nonylphenol polyoxyethylene ether (NP-10), and 55.7g of deionized water with pH=7.0 , and stir evenly to obtain the developer solution of the present invention, the pH value is about 7.1, and the developing effect is shown in Table 1.

Embodiment 2～6

[0023] The basic steps are the same as in Example 1, except that the composition and content are different. The specific composition, content and developing effect are shown in Table 1.

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PUM

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Abstract

The invention relates to a neutral developing solution used for a positive photo-sensitive polyimide photoresist, which belongs to the material technical field and relates to the field of photolithographic techniques, particularly the developing techniques in photolithography. The neutral developing solution used for positive photo-sensitive polyimide photoresists is composed of the following components: 30.0-60.0wt% of a water-soluble amide compound, 1.0-10.0wt% of a water-soluble alcohol or alcohol ether compound, 0.01-3.0wt% of a non-ionic surfactant and water in balance. The pH value of the photoresists is in the range from 6.5 to 7.5. The neutral developing solution increases the difference in solubility between the exposure region and the non-exposure region of the positive photo-sensitive polyimide photoresist in the neutral developing solution, enables the exposure region to rapidly and completely dissolve while the non-exposure region hardly soluble, and ensures sharp line and clear outline of the photolithographic pattern. The water-soluble alcohol or alcohol ether compound has stable dispersibility and defoaming and solution-supporting functions, so that the developing solution has excellent dispersion stability and defoaming property. The neutral developing solution is particularly applicable to the photolithographic process of the positive photo-sensitive polyimide photoresist on the alkali-sensitive substrate or functional film.

Description

technical field [0001] The invention discloses a neutral developer for positive photosensitive polyimide photoresist, which belongs to the field of material technology and relates to photolithography technology, especially the development technology in the photolithography technology. Background technique [0002] In semiconductor, optoelectronic, and microelectronic device processes, people often first coat the solution or sol containing photosensitive resin on the substrate, then irradiate the coating film with light of a certain wavelength, and finally use an appropriate solvent or solution to irradiate the illuminated part or sol. The unexposed portion is dissolved and removed to obtain a pattern. These three steps are called gluing, exposing and developing respectively, and the whole process is called photolithography or patterning. The solvent or solution used in developing is called developer, and the solution or sol containing photosensitive resin used in gluing is ...

Claims

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Application Information

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IPC IPC(8): G03F7/32
Inventor 唐先忠王涛蒋亚东李伟王军
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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