Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for reducing active Balun phase unbalance degree of wideband CS/CG

A phase unbalanced, broadband technology, applied in the direction of electrical components, connecting devices, circuits, etc., can solve the problems of increasing the difficulty of circuit design and debugging, complex circuit structure, etc.

Inactive Publication Date: 2009-02-11
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF0 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is characterized in that a CG triode is added to the traditional CS / CG active balun structure, which improves the broadband phase balance characteristics of the traditional CS / CG active balun, but due to the addition of the triode, the circuit structure is complicated, and at the same time Increased the difficulty of circuit design and debugging

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for reducing active Balun phase unbalance degree of wideband CS/CG
  • Method for reducing active Balun phase unbalance degree of wideband CS/CG
  • Method for reducing active Balun phase unbalance degree of wideband CS/CG

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] Since the load impedance of the common source / common grid transistor is equal to the resistance after the drain-source bias resistance of the common source triode or the common gate triode is connected in parallel with the equivalent resistance of the external resistor network, and usually the external connection of the common source triode or the common gate triode The equivalent resistance of the resistor network is much larger than the drain-source bias resistance of the common-source triode or common-gate triode, so the load impedance of the common-source triode or common-gate triode can actually be approximated as the drain-source bias resistance of the common-source triode or common-gate triode . Actually, the drain-source bias resistance of the common-source triode or common-gate triode with appropriate resistance can be selected within the range of 100-1000 ohms to meet the requirements.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for reducing the bandwidth CS / CG active barron phase position unbalancedness degree belongs to the microwave and millimeter wave integration technical field, and relates to CS / CG active barron phase position performance. Firstly, the physical size of CS / CG FET is determined according to the gain of CS / CG active barron and a current index; secondly the direct current working point of CS / CG FET is set, so as to ensure that the CS / CG FET is operated in saturation state; and then the load resistor ZL1 of CS FET and the load resistor ZL2 are selected, which meet that Cgd_GL1puls ((Cgs_GZs) is divided by (g m_G Z S+1) plus (Z S is divided by R CS)) is equal to C ds_S Z L2 plus ((C GS_S Z S ) is divided by (Z S is divided by R CG+1)), and the average phase position unbalancedness of the CS / CG active barron inside a working bandwidth are obtained after original regulation; finally the direct current offset voltages of the CS / CG active barron is finely regulated, so as to further reduce he average phase position unbalancedness thereof inside the working bandwidth. In the method, load resistors of the CS / CG FET are taken as the main regulation means, and the direct current offset voltage of a dynatron is taken as the auxiliary regulation means, thereby reducing the phase position unbalancedness of CS / CG active barron to minimum. When the phase position unbalancedness of CS / CG active barron is reduced, the structure of the traditional CS / CG active barron is not changed, and the method is simple and is east to operate.

Description

technical field [0001] The invention discloses a method for reducing the unbalance degree of broadband CS / CG (cascode) active balun phase, which belongs to the field of microwave and millimeter wave integration technology and relates to the phase performance of CS / CG active balun. Background technique [0002] Balun is a balanced to unbalanced converter. It is widely used in balanced circuits such as balanced frequency multipliers and balanced mixers. Its function is to change high-frequency signals from single-ended input to balanced output and complete impedance match. Baluns are mainly divided into passive baluns and active baluns. Passive baluns are usually implemented in the form of λ / 4 microstrip transmission lines, and active baluns are usually implemented using triodes. Among them, the passive balun has a larger area and narrower bandwidth, so the active balun is usually used in broadband integration technology. [0003] Among active baluns, the most commonly used ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01P5/10
Inventor 刘宇杨涛杨自强
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products