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power component

A technology of power devices and compensation components, which is applied in the direction of semiconductor devices, electric solid devices, semiconductor/solid device components, etc., can solve problems such as uneven work, phase difference, device stability, and the effect of combined power output. Achieve the effects of improving stability, reducing phase difference, and reducing phase imbalance

Active Publication Date: 2019-08-02
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Problems solved by technology

However, for high-frequency signals, when the signal frequency increases, the signal wavelength decreases. For high-power devices with more fork indices, the physical size of the device will increase to a level comparable to the signal wavelength, so that there is a phase when the signal propagates between each interfinger. Poor and uneven work, which will affect the stability of the device and the effect of the combined power output

Method used

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Embodiment Construction

[0020] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, these embodiments are provided to explain the principles of the invention and its practical application, so that others skilled in the art can understand various embodiments of the invention and various modifications as are suited to particular intended uses. The same reference numerals may be used to refer to the same elements throughout the specification and drawings.

[0021] figure 1 is a schematic cross-sectional structure diagram of a power device according to the first embodiment of the present invention.

[0022] refer to figure 1 , The power device according to the first embodiment of the present invention includes: a gate pad 11, an output pad 21, a source 30, a control pole finger...

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Abstract

The present invention provides a high-frequency power device, which includes: a control electrode pad and an output electrode pad oppositely arranged; a control electrode feed terminal connected to the control electrode pad and a The output pole feed end; wherein, the control pole feed end is set opposite to the output pole feed end; the control pole fork connected to the control pole feed end and the output pole feed end connected output pole fingers; wherein, the control pole fingers intersect with the output pole fingers and are insulated from each other; a compensation element arranged on the control pole feed end and / or the control pole fingers. The invention compensates for the phase difference of the high-frequency signal among the interfingers by adjusting each compensating element, thereby avoiding uneven operation of each interfinger and greatly improving the stability and amplification characteristics of the device.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a power device. Background technique [0002] High-frequency power devices have the function of amplifying high-frequency signals (such as radio frequency, microwave and other signals), and are widely used in mobile communications, radio and television, detection and radar and other fields. Typical power devices mainly include silicon-based MOSFET and LDMOS, gallium arsenide-based MESFET, HBT and HEMT, and gallium nitride-based HEMT according to different materials and structures. Due to the need to output high power, various devices adopt a multi-finger parallel architecture in layout. However, for high-frequency signals, when the signal frequency increases, the signal wavelength decreases. For high-power devices with more fork indices, the physical size of the device will increase to a level comparable to the signal wavelength, so that there is a phase when ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/48
Inventor 刘正东宋贺伦
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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