CMP slurry and method for polishing semiconductor wafer using the same

Abstract

Disclosed is a CMP slurry in which a compound having a weight-average molecular weight of 30-500 and containing a hydroxyl group (OH), a carboxyl group (COOH), or both, is added to a CMP slurry comprising abrasive particles and water and having a first viscosity, so that the CMP slurry is controlled to have a second viscosity 5-30% lower than the first viscosity. Also disclosed is a method for polishing a semiconductor wafer using the CMP slurry. According to the disclosed invention, the agglomerated particle size of abrasive particles in the CMP slurry can be reduced, while the viscosity of the CMP slurry can be reduced and the global planarity of wafers upon polishing can be improved. Thus, the CMP slurry can be advantageously used in processes for manufacturing semiconductor devices requiring fine patterns and can improve the reliability and production of semiconductor devices through the use thereof in semiconductor processes.

Description

technical field [0001] The present invention relates to a CMP slurry, and more particularly, to a CMP slurry capable of improving unevenness within a wafer so that it can be used in a process of manufacturing a semiconductor device requiring a fine pattern. Background technique [0002] As microelectronic devices continue to have larger scales of integration, planarization processes for fabricating such microelectronic devices have become increasingly important. As part of the effort to achieve very large scale integrated microelectronic devices, multiple interconnection techniques and multilayer stacking techniques have generally been applied to semiconductor wafers. However, the non-planarization that occurs after implementing one of the techniques described above causes many problems. Accordingly, planarization processes are applied at various steps in the fabrication of microelectronic devices to minimize irregularities in the wafer surface. [0003] One of these plana...

AI Technical Summary

Problems solved by technology

In particular, this is a serious problem in the case of semiconductor wafers with both highly dense and sparse patterns

Due to the above problems, the final structure with field effect regions has a difference in level between the active region and the field effect region, resulting in less room for subsequent steps in the fabrication of semiconductor devices and degrading the quality of transistors and devices

In short, the conventional CMP treatment method has a problem that even after the oxide layer is removed by CMP treatment, Si with uniform thickness cannot be obtained. 3 N 4 layer pattern

However, these techniques according to the prior art have problems in that their range of application is too broad and not clearly defined, and only provides basic information about polishing speed and selectivity ratio

However, this method has a problem that the viscosity of the slurry increases because a huge amount of additives are added to reduce the non-uniformity within the wafer to a desired level

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