Thin-film transistor and manufacturing method thereof

Abstract

The invention relates to a production method of a film conductive film transistor, which comprises forming polysilicon islands, a gate insulating layer and a gate on a base plate in turn, forming a shallow doping drain region in the polysilicon island below two sides of the gate, wherein the polysilicon island on the right lower portion of the gate is a channel region, and conducting a metal oxidizing process to form a gate oxide layer on the gate, forming a source electrode / drain in the polysilicon island below two sides of the gate oxide layer, forming a dielectric layer on the gate insulating layer, removing parts of the dielectric layer and the gate insulating layer to expose a part of the source electrode / drain and to form a patterning dielectric layer and a patterning gate insulating layer, and forming a source electrode / drain conductor layer on the patterning dielectric layer, wherein the source electrode / drain conductor layer is respectively and electrically connected with the source electrode / drain. Therefore the production method of the film transistor needs less mask modular.

Description

technical field [0001] The present invention relates to a semiconductor element and its manufacturing method, and in particular to a thin film transistor and its manufacturing method. Background technique [0002] With the development of high technology, digital image devices have become a common product in daily life, and currently the most popular among these digital image devices is Liquid Crystal Display (LCD). In an active matrix liquid crystal display, the driving element can be a thin film transistor (thin film transistor) or a diode, etc., and the thin film transistor can be divided into amorphous silicon (a-Si) according to the material of its channel region. Thin film transistors and polysilicon (poly-silicon) thin film transistors. Among them, polysilicon thin film transistors are gradually attracting market attention because they consume less power and have higher electron mobility than amorphous silicon thin film transistors. [0003] Figure 1A to Figure 1E A...

AI Technical Summary

Problems solved by technology

Due to the large number of masks used in this prior art, the cost is also high

In addition, due to the alignment error between the masks, the gate 140 is usually not formed in the correct position, so the shallowly doped drain region 126 on both sides of the channel region 124 will be asymmetrical, resulting in electrical problems.

Images