Unlock instant, AI-driven research and patent intelligence for your innovation.

An oxygen enhanced metastable silicon germanium film layer

A metastable, silicon-germanium technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as non-manufacturability, low current gain, excessive leakage current, etc.

Inactive Publication Date: 2009-03-18
ATMEL CORP
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Bridging defects will also cause excessive leakage current and extremely low current gain
The film will also be sensitive to process induced thermal stress and therefore will not be manufacturable

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • An oxygen enhanced metastable silicon germanium film layer
  • An oxygen enhanced metastable silicon germanium film layer
  • An oxygen enhanced metastable silicon germanium film layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] [18] Strain compensating atomic species are elements that have an atomic radius different from the elements making up the strained lattice. For strain compensation of SiGe, the preferred compensation species is carbon. The skilled artisan will recognize that replacing carbon on the order of 1% will compensate 8% to 10% of germanium. Carbon can be placed instead to achieve approximately 2.5% in SiGe, or enough carbon to strain compensate 20% to 25% of germanium. It is possible to use strain compensating metastable films with greater than 40% germanium in electrical devices. Details regarding the determination of metastable membranes are discussed in more detail below.

[0019] [19] The invention described here differs significantly from the contemporaneous use of metastable membranes. Here, oxygen is intentionally added to the SiGe lattice to participate in terminating crystal defect propagation, thus allowing higher Ge incorporation and the associated benefits discus...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for pseudomorphic growth and integration of a strain-compensated metastable and / or unstable compound base (107) having incorporated oxygen and an electronic device (100) incorporating the base is described. The strain-compensated base (107) is doped by substitutional and / or interstitial placement of a strain-compensating atomic species. The electronic device may be, for example, a SiGe NPN HBT.

Description

technical field [0001] [01] The present invention generally relates to methods of fabricating integrated circuits (ICs). More specifically, the present invention is a method of fabricating a metastable silicon germanium (SiGe) base and incorporating it into an electrical device such as a SiGe heterojunction bipolar transistor (HBT). Background technique [0002] [02] Compared to silicon (Si) bipolar junction transistors (BJTs), SiGe HBTs have significant advantages in characteristics such as gain, frequency response, and noise parameters. Further, SiGe HBTs retain the ability to be combined with CMOS devices at relatively low cost. The cutoff frequency F of SiGe HBT devices has been reported t Over 300GHz, comparable to gallium arsenide (GaAs). However, GaAs devices are relatively costly, while not achieving the level of integration that BiCMOS devices can achieve. Silicon-compatible SiGe HBTs provide a low-cost, high-speed, low-power solution that rapidly replaces other...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/80
CPCH01L29/66242H01L21/02532H01L21/0262H01L21/02576H01L21/02579H01L21/02381
Inventor 达尔文·G·恩尼克斯约翰·T·查菲达米安·A·卡弗
Owner ATMEL CORP