InP-InAsP nanowire LED and preparation thereof
A technology of inp-inasp and nanowires, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problem of low luminous efficiency of red light and achieve high luminous efficiency
Inactive Publication Date: 2010-11-24
杭州天筹光电科技有限公司
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Moreover, the luminous efficiency of traditionally used red and infrared LEDs is relatively low.
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Abstract
An InP-InAsP nanowire LED and a preparation method thereof belong to the technology field of light-emitting diodes. The InP-InAsP nanowire LED comprises a substrate, a p-InP nanowire layer, an InAsxP1-x nanowire array and an n-InP nanowire layer are sequentially arranged on one surface of the substrate from bottom to top by deposition, a first electrode is arranged on the other surface of the substrate by deposition, a second electrode is arranged on the n-InP nanowire layer by deposition, the InAsxP1-x nanowire array is an active layer of the LED, wherein, the range of the x value is 0-0.6. The InP-InAsP nanowire LED takes the InAsP nanowire array as the active layer, thereby being capable of obtaining the higher light emitting efficiency; emergent light with the different wave bands canbe obtained through the control and the regulation of the size, and other factors of the InAsP nanowire array according to the needs of the different occasions or the different customers, thereby being capable of preparing light-emitting devices which emit red light, infrared light, mid-infrared light, and the like.
Description
A kind of InP-InAsP nanowire LED and its preparation method technical field The invention belongs to the technical field of light-emitting diodes, especially the technical field of nano-wire light-emitting diodes, and specifically relates to an InP-InAsP nano-wire LED and a preparation method thereof. Background technique With the development of material technology, it becomes possible to grow direct bandgap nanowires directly on various substrates, such as silicon and gallium nitride. In the field of solid-state luminescent lighting applications and quantum optics, nanowire arrays are considered to be an ideal luminescent material due to their high luminous efficiency. In addition, due to the quantum confinement effect, nanowires have better luminescent properties than bulk materials. Therefore, using nanowires as the active layer of light-emitting diodes can greatly improve the luminous efficiency, and according to the quantum confinement effect, by adjusting the width o...
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IPC IPC(8): H01L33/00H01L33/30
Inventor 沈常宇金尚忠彭德光林科周盛华古元华
Owner 杭州天筹光电科技有限公司