Miniature connector and preparation method thereof

Abstract

The invention discloses a miniature connector and a production method, the miniature connector comprises a patterned silicon material layer, a patterned insulation layer, at least a first stress layer, at least a second stress layer and a cover body, wherein the patterned insulation layer is matched and arranged on the patterned silicon material layer; the patterned silicon material layer is provided with a fist opening; the patterned insulation layer is provided with a second opening corresponding to the first opening and at least a cantilever terminal; and the cantilever terminal is protruded above the first opening. The first stress layer covers the end part of the cantilever terminal far away from the inner wall of the second opening, and so the end part is bent towards a direction. The second stress layer covers the cantilever terminal outside the end part, and so the cantilever terminal is bent towards the other direction. The cover body is matched and arranged on the patterned insulation layer, and covers the cantilever terminal.

Description

technical field [0001] The invention relates to a micro-electromechanical device and a manufacturing method thereof, and in particular to a micro-connector and a manufacturing method thereof. Background technique [0002] Generally speaking, the electronic device is usually equipped with a connector, and is electrically connected with the insertion part through the connector, so that the electronic device has better performance. However, with the advancement of science and technology, electronic devices tend to be thinner and lighter. The connector plastic body made by traditional molds and the conductive terminals made by stamping technology are not easy to be installed in thinner and lighter electronic devices. The known technology proposes a miniature connector suitable for being installed in light and thin electronic devices. Wherein, the miniature connector is provided with a plurality of conductive terminals, and the insertion part can be inserted into the micro conne...

AI Technical Summary

Problems solved by technology

However, since the cost of the SOI substrate is relatively expensive, the production cost of the micro connector will increase significantly

On the other hand, in the process of using the SOI substrate to make micro-connectors, since the insulating layer between the two silicon material layers is thin (about 3 μm), part of the insulating layer between the two silicon material layers is removed to make the cantilever When terminals are used, the etchant used to remove the insulating layer is easily trapped in the thin gap between the disilicon material layers and is not easily removed. The surface tension of the etchant trapped between the disilicon material layers will generate Adsorption phenomenon (stiction) affects the out-of-plane shape of the cantilever terminal, resulting in poor yields of micro-connectors

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